X-On Electronics has gained recognition as a prominent supplier of SFR9024TM MOSFETs across the USA, India, Europe, Australia, and various other global locations. SFR9024TM MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SFR9024TM ON Semiconductor

SFR9024TM electronic component of ON Semiconductor
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See Product Specifications
Part No.SFR9024TM
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: P-CH/60V/7.8A/0.28OHM
Datasheet: SFR9024TM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 0.699 ea
Line Total: USD 349.5 
Availability - 0
MOQ: 500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 500
Multiples : 1
500 : USD 0.699
2500 : USD 0.3635

   
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We are delighted to provide the SFR9024TM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFR9024TM and other electronic components in the MOSFETs category and beyond.

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SFR/U9024 Advanced Power MOSFET FEATURES BV = -60 V DSS n Avalanche Rugged Technology R = 0.28 DS(on) n Rugged Gate Oxide Technology n Lower Input Capacitance I = -7.8 A D n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current : 10 A(Max.) @ V = -60V DS n Lower R : 0.206 (Typ.) 2 DS(ON) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage -60 V DSS o Continuous Drain Current (T =25 C) -7.8 C I A D o Continuous Drain Current (T =100 C) -5.5 C I Drain Current-Pulsed 1 31 A DM O V Gate-to-Source Voltage 30 V GS E Single Pulsed Avalanche Energy 2 155 mJ AS O I Avalanche Current 1 -7.8 A AR O E Repetitive Avalanche Energy 1 3.2 mJ AR O dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O o * Total Power Dissipation (T =25 C) 2.5 W A o P Total Power Dissipation (T =25 C) 32 W D C o Linear Derating Factor 0.26 W/ C Operating Junction and T , T - 55 to +150 J STG Storage Temperature Range o C Maximum Lead Temp. for Soldering T 300 L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Case -- 3.91 JC o R * Junction-to-Ambient C/W JA -- 50 R Junction-to-Ambient -- 110 JA * When mounted on the minimum pad size recommended (PCB Mount). Rev. CP-CHANNEL SFR/U9024 POWER MOSFET o Electrical Characteristics (T =25 C unless otherwise specified) C Symbol Characteristic Min. Typ. Max. Units Test Condition BV V V =0V,I =-250 A DSS Drain-Source Breakdown Voltage -60 -- -- GS D o BV/ T I =-250 A See Fig 7 J Breakdown Voltage Temp. Coeff. V/ C -- -0.04 -- D V V V =-5V,I =-250 A GS(th) Gate Threshold Voltage -2.0 -- -4.0 DS D V =-20V Gate-Source Leakage , Forward -- -- -100 GS I nA GSS V =20V Gate-Source Leakage , Reverse -- -- 100 GS V =-60V -- -- -10 DS I Drain-to-Source Leakage Current DSS A o V =-48V,T =125 C -- -- -100 DS C Static Drain-Source 4 R V =-10V,I =-3.9A -- -- 0.28 O DS(on) GS D On-State Resistance 4 g -- Forward Transconductance 3.7 -- S V =-30V,I =-3.9A fs O DS D C Input Capacitance -- 465 600 iss V =0V,V =-25V,f =1MHz GS DS C -- Output Capacitance 140 215 oss pF See Fig 5 C Reverse Transfer Capacitance -- 40 60 rss t -- Turn-On Delay Time 11 30 d(on) V =-30V,I =-9.7A, DD D t Rise Time -- 21 50 r R =18 ns G t -- Turn-Off Delay Time 29 65 d(off) See Fig 13 4 5 OO t Fall Time -- 20 50 f Q -- Total Gate Charge 15 19 V =-48V,V =-10V, g DS GS Q Gate-Source Charge -- 2.9 -- nC I =-9.7A gs D 4 5 Q -- Gate-Drain(Miller) Charge 6.0 -- See Fig 6 & Fig 12 OO gd Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I Continuous Source Current -- -- -7.8 Integral reverse pn-diode S A 1 I Pulsed-Source Current O -- -- -31 in the MOSFET SM o 4 V Diode Forward Voltage V -- -- -3.8 T =25 C,I =-7.8A,V =0V SD O J S GS o t Reverse Recovery Time ns -- 80 -- T =25 C,I =-9.7A rr J F Q Reverse Recovery Charge C 4 -- 0.22 -- di /dt=100A/ s O rr F Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=3.0mH, I =-7.8A, V =-25V, R =27 *, Starting T =25 C O AS DD G J o 3 _ _ _ I < -9.7A, di/dt < 250A/ s, V < BV , Starting T =25 C O SD DD DSS J 4 _ Pulse Test : Pulse Width = 250 s, Duty Cycle< 2% O 5 Essentially Independent of Operating Temperature O

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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