SFT1202-TL-E ON Semiconductor

Ordering number : ENA1169A SFT1202 Bipolar Transistor SFT1202 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1W Collector Dissipation P C Tc=25C15W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =80V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =100mA 200 560 FE CE C Gain-Bandwidth Product f V =10V, I =300mA 140 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 12 pF CB V (sat)1 I =1A, I =100mA 110 165 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =0.5A, I =50mA 65 100 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =1A, I =100mA 0.85 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 180 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =100A, R =0 180 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =1mA, R = 150 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 7 V (BR)EBO E C Turn-ON Time t 50 ns on Storage Time t See speci ed Test Circuit. 1460 ns stg Fall Time t 70 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT V R R B R L 50 + + 100 F 470 F V = --5V V =75V BE CC I =10I = --10I =0.5A C B1 B2 Ordering Information Device Package Shipping memo SFT1202-E TP 500pcs./bag Pb Free SFT1202-TL-E TP-FA 700pcs./reel No.A1169-2/9