X-On Electronics has gained recognition as a prominent supplier of SMDA24CDR2G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMDA24CDR2G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMDA24CDR2G ON Semiconductor

SMDA24CDR2G electronic component of ON Semiconductor
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See Product Specifications
Part No.SMDA24CDR2G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diode Arrays 4 CHAN BIDIRECTIONAL TVS
Datasheet: SMDA24CDR2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.9685
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.5379
10 : USD 1.3116
100 : USD 1.0987
500 : USD 1.0229
1000 : USD 0.907
2500 : USD 0.8925
5000 : USD 0.8925
10000 : USD 0.8591
25000 : USD 0.8246
N/A

Obsolete
0
MOQ : 43
Multiples : 1
43 : USD 1.8718
100 : USD 1.4944
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Dimensions
Brand
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMDA24CDR2G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMDA24CDR2G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD/Surge Protection Diode Array Bi-directional ESD Protection for High-Speed Data Line SMDA05C Series The SMDA05C surge protection series is designed to protect www.onsemi.com equipment attached to up to four high speed communication lines from ESD, EFT and surge. SO8 Features ESD AND SURGE PROTECTOR SO8 Package 300 WATTS PEAK POWER Peak Power 300 W 8 x 20 s ESD Rating: IEC 6100042 (ESD) 15 kV (Air) 8 kV (Contact) PIN CONFIGURATION IEC 6100044 (EFT) 40 A (5/50 ns) AND SCHEMATIC IEC 6100045 (Surge) 12 A (8/20 s) 1 8 UL Flammability Rating of 94 V0 2 7 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 6 4 5 Typical Applications High Speed Communication Line Protection Data and I/O Lines Microprocessor Based Equipment 8 LAN/WAN Equipment 1 Servers SO8 Notebook and Desktop PC CASE 75107 Serial and Parallel Ports Peripherals MARKING DIAGRAM 8 MAXIMUM RATINGS XXX Rating Symbol Value Unit AYWW Peak Power Dissipation P 300 W pk 8 x 20 s T = 25C (Note 1) 1 A Junction and Storage Temperature Range T , T 55 to C J stg A = Assembly Location +150 Y = Year WW = Work Week Lead Solder Temperature T 260 C L = PbFree Package Maximum 10 Seconds Duration (Note: Microdot may be in either location) 1. Nonrepetitive current pulse 8 x 20 s exponential decay waveform. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: November, 2019 Rev. 2 SMDA05C/DSMDA05C Series SMDA05C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Reverse Breakdown Voltage I = 1.0 mA V 6.0 V t BR Reverse Leakage Current V = 5 Volts I N/A 20 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 s V N/A 9.8 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 s V N/A 11 V PP C Maximum Peak Pulse Current, 8 x 20 s I 17 A PP Junction Capacitance V = 0 V, f = 1 MHz C 350 pF R J SMDA12C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 12 V RWM Reverse Breakdown Voltage I = 1.0 mA V 13.3 V t BR Reverse Leakage Current V = 12 Volts I N/A 1.0 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 s V N/A 19 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 s V N/A 24 V PP C Maximum Peak Pulse Current, 8 x 20 s I 12 A PP Junction Capacitance V = 0 V, f = 1 MHz C 120 pF R J SMDA15C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 15 V RWM Reverse Breakdown Voltage I = 1.0 mA V 16.7 V t BR Reverse Leakage Current V = 15 Volts I N/A 1.0 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 s V N/A 24 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 s V N/A 30 V PP C Maximum Peak Pulse Current, 8 x 20 s I 10 A PP Junction Capacitance V = 0 V, f = 1 MHz C 75 pF R J SMDA24C ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Working Voltage V 24 V RWM Reverse Breakdown Voltage I = 1.0 mA V 26.7 V t BR Reverse Leakage Current V = 24 Volts I N/A 1.0 A RWM R Maximum Clamping Voltage I = 1.0 A, 8 x 20 s V N/A 43 V PP C Maximum Clamping Voltage I = 5.0 A, 8 x 20 s V N/A 55 V PP C I 5.0 A Maximum Peak Pulse Current, 8 x 20 s PP Junction Capacitance V = 0 V, f = 1 MHz C 50 pF R J www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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