SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G ESD Protection Diode Array, 5-Line This 5line surge protection array is designed for application www.onsemi.com requiring transient voltage protection capability. It is intended for use in overtransient voltage and ESD sensitive equipment such as SC88 FIVE SURGE computers, printers, automotive electronics, networking communication and other applications. This device features a PROTECTION monolithic common anode design which protects five independent 100 W PEAK POWER lines in a single SC88 package. Features Protects up to 5Line in a Single SC88 Package SC88 Peak Power Dissipation 100 W (8 x 20 s Waveform) CASE 419B ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model STYLE 24 and Class C (Exceeding 400 V) per Machine Model. Compliance with IEC 6100042 (ESD) 15 kV (Air), 8 kV (Contact) PIN ASSIGNMENT Flammability Rating of UL 94 V0 PIN1. CATHODE SZ Prefix for Automotive and Other Applications Requiring Unique 1 6 2. ANODE Site and Control Change Requirements AECQ101 Qualified and 3. CATHODE 2 5 PPAP Capable 4. CATHODE 5. CATHODE PbFree Packages are Available* 3 4 6. CATHODE Applications HandHeld Portable Applications MARKING DIAGRAM Networking and Telecom Automotive Electronics 6 Serial and Parallel Ports M XX Notebooks, Desktops, Servers MAXIMUM RATINGS (T = 25C unless otherwise specified) 1 J Symbol Rating Value Unit XX = Specific Device Code P 1 Peak Power Dissipation W PK 6J = SMF05C 8 x 20 s Double Exponential Waveform 100 6K = SZSMF12C/SMF12C (Note 1) 6L = SMF15C 6M= SMF24C T Operating Junction Temperature Range 40 to 125 C J M = Date Code T Storage Temperature Range 55 to 150 C STG =PbFree Package T Lead Solder Temperature (10 s) 260 C L ORDERING INFORMATION ESD Human Body Model (HBM) 16000 V Machine Model (MM) 400 See detailed ordering and shipping information in the package IEC 6100042 Air (ESD) 15000 dimensions section on page 3 of this data sheet. IEC 6100042 Contact (ESD) 15000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 3. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 Rev. 5 SMF05C/DSMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G SMF05CT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 6.2 7.2 V BR T Reverse Leakage Current I V = 5 V 0.07 5.0 A R RWM Clamping Voltage V I = 5 A (8 x 20 s Waveform) 9.8 V C PP Clamping Voltage V I = 8 A (8 x 20 s Waveform) 12.5 V C PP Maximum Peak Pulse Current I 8 x 20 s Waveform 8.0 A PP Capacitance C V = 0 V, f = 1 MHz (Line to GND) 80 130 pF J R SMF12CT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 12 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 13.3 15 V BR T Reverse Leakage Current I V = 12 V 0.01 0.1 A R RWM Clamping Voltage V I = 3 A (8 x 20 s Waveform) 21 V C PP Clamping Voltage V I = 6 A (8 x 20 s Waveform) 23 V C PP Maximum Peak Pulse Current I 8 x 20 s Waveform 6.0 A PP Capacitance C V = 0 V, f = 1 MHz (Line to GND) 40 60 pF J R SMF15CT1G ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 15 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 17 19 V BR T Reverse Leakage Current I V = 15 V 0.01 1.0 A R RWM Clamping Voltage V I = 1 A (8 x 20 s Waveform) 23 V C PP Clamping Voltage V I = 5 A (8 x 20 s Waveform) 29 V C PP Maximum Peak Pulse Current I 8 x 20 s Waveform 5.0 A PP Capacitance C V = 0 V, f = 1 MHz (Line to GND) 33 45 pF J R SMF24CT1G ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 24 V RWM Breakdown Voltage V I = 1 mA, (Note 3) 26.7 32 V BR T Reverse Leakage Current I V = 24 V 0.01 1.0 A R RWM Clamping Voltage V I = 1 A (8 x 20 s Waveform) 40 V C PP Clamping Voltage V I = 2.5 A (8 x 20 s Waveform) 44 V C PP Maximum Peak Pulse Current I 8 x 20 s Waveform 2.5 A PP Capacitance C V = 0 V, f = 1 MHz (Line to GND) 21 25 pF J R 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Include SZ-prefix devices where applicable. www.onsemi.com 2