DATA SHEET www.onsemi.com General Purpose Transistors COLLECTOR 3 NPN Silicon 1 MMBT2222L, MMBT2222AL, BASE SMMBT2222AL 2 EMITTER Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements AECQ101 Qualified and 2 PPAP Capable SOT23 CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit CollectorEmitter Voltage V Vdc CEO MARKING DIAGRAM MMBT2222L 30 MMBT2222AL, SMMBT2222AL 40 CollectorBase Voltage V Vdc CBO xxx M MMBT2222L 60 MMBT2222AL, SMMBT2222AL 75 1 EmitterBase Voltage V Vdc EBO MMBT2222L 5.0 xxx = 1P or M1B MMBT2222AL, SMMBT2222AL 6.0 M = Date Code* = PbFree Package Collector Current Continuous I 600 mAdc C (Note: Microdot may be in either location) Collector Current Peak (Note 3) I 1100 mAdc CM *Date Code orientation and/or overbar may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D ORDERING INFORMATION (Note 1) T = 25C 225 mW A See detailed ordering and shipping information in the package Derate above 25C 1.8 mW/C dimensions section on page 6 of this data sheet. Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2021 Rev. 12 MMBT2222LT1/DMMBT2222L, MMBT2222AL, SMMBT2222AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) MMBT2222 V 30 Vdc C B (BR)CEO MMBT2222A 40 CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) MMBT2222 V 60 Vdc C E (BR)CBO MMBT2222A 75 EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) MMBT2222 V 5.0 Vdc E C (BR)EBO MMBT2222A 6.0 Collector Cutoff Current I nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) MMBT2222A, SMMBT2222A 10 CE EB(off) Collector Cutoff Current (V = 50 Vdc, I = 0) MMBT2222 I 0.01 Adc CB E CBO (V = 60 Vdc, I = 0) MMBT2222A, SMMBT2222A 0.01 CB E (V = 50 Vdc, I = 0, T = 125C) MMBT2222 10 CB E A (V = 60 Vdc, I = 0, T = 125C) MMBT2222A, SMMBT2222A 10 CB E A Emitter Cutoff Current (V = 3.0 Vdc, I = 0) MMBT2222A, SMMBT2222A I 100 nAdc EB C EBO Base Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) MMBT2222A, SMMBT2222A I 20 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) MMBT2222A only 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 4) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 4) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 4) MMBT2222 30 C CE MMBT2222A, SMMBT2222A 40 CollectorEmitter Saturation Voltage (Note 4) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) MMBT2222 0.4 C B MMBT2222A, SMMBT2222A 0.3 (I = 500 mAdc, I = 50 mAdc) MMBT2222 1.6 C B MMBT2222A, SMMBT2222A 1.0 BaseEmitter Saturation Voltage (Note 4) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) MMBT2222 1.3 C B MMBT2222A, SMMBT2222A 0.6 1.2 (I = 500 mAdc, I = 50 mAdc) MMBT2222 2.6 C B MMBT2222A, SMMBT2222A 2.0 SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 5) f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) MMBT2222 250 C CE MMBT2222A, SMMBT2222A 300 Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) MMBT2222 30 EB C MMBT2222A, SMMBT2222A 25 Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 4.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A 75 375 C CE www.onsemi.com 2