MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SOT323/SC70 package which is designed for low power surface mount applications. Features AECQ101 Qualified and PPAP Capable SC70 S Prefix for Automotive and Other Applications Requiring Unique CASE 419 Site and Control Change Requirements STYLE 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 75 Vdc CBO 2 EMITTER EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 600 mAdc C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit P1 M Total Device Dissipation FR5 Board P 150 mW D T = 25C A Thermal Resistance, JunctiontoAmbient R 280 C/W 1 JA Junction and Storage Temperature T , T 55 to +150 C J stg P1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMBT2222AWT1G SC70 3,000 / (PbFree) Tape & Reel SMMBT2222AWT1G SC70 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: July, 2018 Rev. 8 MMBT2222AWT1/DMMBT2222AWT1G, SMMBT2222AWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 75 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Base Cutoff Current I nAdc BL (V = 60 Vdc, V = 3.0 Vdc) 20 CE EB Collector Cutoff Current I nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) 10 CE EB ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) H FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B BaseEmitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 30 EB C Input Impedance h k ie (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 0.25 1.25 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 4.0 CE C SmallSignal Current Gain h fe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 75 375 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 25 200 CE C Noise Figure NF dB (V = 10 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 4.0 CE C S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2