X-On Electronics has gained recognition as a prominent supplier of SMMBT2222AWT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMMBT2222AWT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMMBT2222AWT1G ON Semiconductor

SMMBT2222AWT1G electronic component of ON Semiconductor
SMMBT2222AWT1G ON Semiconductor
SMMBT2222AWT1G Bipolar Transistors - BJT
SMMBT2222AWT1G  Semiconductors

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See Product Specifications
Part No. SMMBT2222AWT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT SS GP XSTR NPN 40V
Datasheet: SMMBT2222AWT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0278 ea
Line Total: USD 1.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 18 Mar to Mon. 24 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0464
6000 : USD 0.046
9000 : USD 0.0441

0
Ship by Fri. 14 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0278
10 : USD 0.8398
100 : USD 0.1785
500 : USD 0.1173
1000 : USD 0.0802
3000 : USD 0.0622
9000 : USD 0.0522
24000 : USD 0.0491
45000 : USD 0.0451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMMBT2222AWT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMMBT2222AWT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SOT323/SC70 package which is designed for low power surface mount applications. Features AECQ101 Qualified and PPAP Capable SC70 S Prefix for Automotive and Other Applications Requiring Unique CASE 419 Site and Control Change Requirements STYLE 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 75 Vdc CBO 2 EMITTER EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 600 mAdc C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit P1 M Total Device Dissipation FR5 Board P 150 mW D T = 25C A Thermal Resistance, JunctiontoAmbient R 280 C/W 1 JA Junction and Storage Temperature T , T 55 to +150 C J stg P1 = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMBT2222AWT1G SC70 3,000 / (PbFree) Tape & Reel SMMBT2222AWT1G SC70 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: July, 2018 Rev. 8 MMBT2222AWT1/DMMBT2222AWT1G, SMMBT2222AWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 75 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Base Cutoff Current I nAdc BL (V = 60 Vdc, V = 3.0 Vdc) 20 CE EB Collector Cutoff Current I nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) 10 CE EB ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) H FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 40 C CE CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.3 C B (I = 500 mAdc, I = 50 mAdc) 1.0 C B BaseEmitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.2 C B (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 30 EB C Input Impedance h k ie (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 0.25 1.25 CE C 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 4.0 CE C SmallSignal Current Gain h fe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 75 375 CE C Output Admittance h mhos oe (V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 25 200 CE C Noise Figure NF dB (V = 10 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 4.0 CE C S SWITCHING CHARACTERISTICS Delay Time t 10 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 25 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 60 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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