MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and MARKING PPAP Capable DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* SOT23 xxx M CASE 318 STYLE 6 MAXIMUM RATINGS 1 Rating Symbol Value Unit xxx = M1J or 1JA M = Date Code* Collector Emitter Voltage V 15 Vdc CEO = PbFree Package Collector Emitter Voltage V 40 Vdc CES (Note: Microdot may be in either location) Collector Base Voltage V 40 Vdc *Date Code orientation and/or overbar may CBO vary depending upon manufacturing location. Emitter Base Voltage V 4.5 Vdc EBO Collector Current Continuous I 200 mAdc C COLLECTOR THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D 1 (Note 1) T = 25C 225 mW A BASE Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA 2 EMITTER Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MMBT2369LT1G SOT23 3,000 / assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MMBT2369LT3G SOT23 10,000 / (PbFree) Tape & Reel SMMBT2369LT1G SOT23 3,000 / (PbFree) Tape & Reel MMBT2369ALT1G SOT23 3,000 / (PbFree) Tape & Reel SMMBT2369ALT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 Rev. 11 MMBT2369LT1/DMMBT2369L, MMBT2369AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 15 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES 40 (I = 10 Adc, V = 0) C BE Collector Base Breakdown Voltage V Vdc (BR)CBO 40 (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 4.5 E C Collector Cutoff Current I Adc CBO (V = 20 Vdc, I = 0) 0.4 CB E (V = 20 Vdc, I = 0, T = 150C) 30 CB E A Collector Cutoff Current I Adc CES MMBT2369A (V = 20 Vdc, V = 0) 0.4 CE BE ON CHARACTERISTICS DC Current Gain (Note 3) h FE MMBT2369 (I = 10 mAdc, V = 1.0 Vdc) 40 120 C CE MMBT2369A (I = 10 mAdc, V = 1.0 Vdc) 120 C CE MMBT2369A (I = 10 mAdc, V = 0.35 Vdc) 40 C CE MMBT2369A (I = 10 mAdc, V = 0.35 Vdc, T = 55C) 20 C CE A MMBT2369A (I = 30 mAdc, V = 0.4 Vdc) 30 C CE MMBT2369 (I = 100 mAdc, V = 2.0 Vdc) 20 C CE MMBT2369A (I = 100 mAdc, V = 1.0 Vdc) 20 C CE Collector Emitter Saturation Voltage (Note 3) V Vdc CE(sat) MMBT2369 (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc) 0.20 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = +125C) 0.30 C B A MMBT2369A (I = 30 mAdc, I = 3.0 mAdc) 0.25 C B MMBT2369A (I = 100 mAdc, I = 10 mAdc) 0.50 C B Base Emitter Saturation Voltage (Note 3) V Vdc BE(sat) MMBT2369/A (I = 10 mAdc, I = 1.0 mAdc) 0.7 0.85 C B MMBT2369A (I = 10 mAdc, I = 1.0 mAdc, T = 55C) 1.02 C B A MMBT2369A (I = 30 mAdc, I = 3.0 mAdc) 1.15 C B MMBT2369A (I = 100 mAdc, I = 10 mAdc) 1.60 C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Small Signal CurrentGain h fe (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 5.0 C CE SWITCHING CHARACTERISTICS Storage Time t ns s (I = I = I = 10 mAdc) 5.0 13 B1 B2 C TurnOn Time t ns on (V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc) 8.0 12 CC C B1 TurnOff Time t ns off (V = 3.0 Vdc, I = 10 mAdc, I = 3.0 mAdc, I = 1.5 mAdc) 10 18 CC C B1 B2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2