MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements AECQ101 Qualified and 3 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit CollectorEmitter Voltage V 60 Vdc CEO CollectorBase Voltage V 60 Vdc CBO 3 SOT23 (TO236AB) EmitterBase Voltage V 5.0 Vdc EBO CASE 318 1 Collector Current Continuous I 600 mAdc C STYLE 6 2 Collector Current Peak (Note 3) I 1200 mAdc CM THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A 2F M Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient 556 C/W R JA 1 Total Device Dissipation Alumina P D 2F = Device Code Substrate, (Note 2) T = 25C 300 mW A M = Date Code* Derate above 25C 2.4 mW/C = PbFree Package Thermal Resistance, JunctiontoAmbient R 417 C/W JA (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Total Device Dissipation Heat Spreader P D or equivalent, (Note 4) T = 25C 350 mW vary depending upon manufacturing location. A Thermal Resistance, JunctiontoAmbient R 357 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. MMBT2907ALT1G SOT23 3000 / Tape & 1. FR5 = 1.0 0.75 0.062 in. SMMBT2907ALT1G (PbFree) 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Reel 3. Reference SOA curve. MMBT2907ALT3G SOT23 2 10,000 / Tape & 4. Heat Spreader or equivalent = 450 mm , 2 oz. SMMBT2907ALT3G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2016 Rev. 15 MMBT2907ALT1/DMMBT2907AL, SMMBT2907AL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 5) V Vdc (BR)CEO 60 (I = 1.0 mAdc, I = 0) C B 60 (I = 10 mAdc, I = 0) C B CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc CE EB(off) CEX Collector Cutoff Current I Adc CBO 0.010 (V = 50 Vdc, I = 0) CB E 10 (V = 50 Vdc, I = 0, T = 125C) CB E A Base Cutoff Current (V = 30 Vdc, V = 0.5 Vdc) I 50 nAdc CE EB(off) BL ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) (Note 5) 50 C CE CollectorEmitter Saturation Voltage (Note 5) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) (Note 5) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B BaseEmitter Saturation Voltage (Note 5) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Notes 5, 6), f 200 MHz T (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF CB E obo Input Capacitance (V = 2.0 Vdc, I = 0, f = 1.0 MHz) C 30 EB C ibo SWITCHING CHARACTERISTICS TurnOn Time t 45 on (V = 30 Vdc, I = 150 mAdc, CC C Delay Time t 10 d I = 15 mAdc) B1 Rise Time t 40 r ns TurnOff Time t 100 off (V(V = 6.0 Vdc, I = 6.0 Vdc, I = 150 mAd = 150 mAdc,c, CCCC CC Storage Time t 80 s II = I = I = 15 mAdc) = 15 mAdc) B1B1 B2B2 Fall Time t 30 f 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 6. f is defined as the frequency at which h extrapolates to unity. T fe INPUT INPUT +15 V -6.0 V -30 V Z = 50 Z = 50 o o PRF = 150 PPS PRF = 150 PPS 200 RISE TIME 2.0 ns RISE TIME 2.0 ns 1.0 k 37 P.W. < 200 ns P.W. < 200 ns 1.0 k 1.0 k TO OSCILLOSCOPE TO OSCILLOSCOPE 0 0 RISE TIME 5.0 ns RISE TIME 5.0 ns 50 -16 V -30 V 50 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 2