X-On Electronics has gained recognition as a prominent supplier of SMMBT3904LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMMBT3904LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMMBT3904LT1G ON Semiconductor

SMMBT3904LT1G electronic component of ON Semiconductor
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Part No.SMMBT3904LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS GP XSTR SPCL TR
Datasheet: SMMBT3904LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0245 ea
Line Total: USD 73.5 
Availability - 291000
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
291000
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0245
6000 : USD 0.0167
9000 : USD 0.0162
27000 : USD 0.0155
51000 : USD 0.0149
102000 : USD 0.0144
252000 : USD 0.014
501000 : USD 0.0137

30103
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0351
200 : USD 0.0279
600 : USD 0.024
3000 : USD 0.0204
9000 : USD 0.0182
21000 : USD 0.0171

1683
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.35
10 : USD 0.1932
25 : USD 0.1434
100 : USD 0.0967
250 : USD 0.0753
328 : USD 0.0522
901 : USD 0.0493
9000 : USD 0.0472

17460
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0229
6000 : USD 0.0222
9000 : USD 0.0199
15000 : USD 0.0196
21000 : USD 0.0151
30000 : USD 0.014

40740
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

291000
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0347
6000 : USD 0.0285
9000 : USD 0.0249
27000 : USD 0.0224
51000 : USD 0.0204

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the SMMBT3904LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMMBT3904LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com General Purpose Transistor COLLECTOR 3 NPN Silicon 1 BASE MMBT3904L, SMMBT3904L 2 Features EMITTER These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique SOT23 (TO236) Site and Control Change Requirements AECQ101 Qualified and CASE 318 PPAP Capable 1 STYLE 6 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO 1AM M Collector Current Continuous I 200 mAdc C 1 Collector Current Peak (Note 3) I 900 mAdc CM THERMAL CHARACTERISTICS 1AM = Specific Device Code M = Date Code* Characteristic Symbol Max Unit = PbFree Package Total Device Dissipation FR5 Board P D (Note: Microdot may be in either location) (Note 1) T = 25C 225 mW A *Date Code orientation and/or overbar may Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate, (Note 2) ORDERING INFORMATION T = 25C 300 mW A Derate above 25C 2.4 mW/C Device Package Shipping Thermal Resistance, JunctiontoAmbient R 417 C/W JA MMBT3904LT1G SOT23 3000 / Tape & Junction and Storage Temperature T , T 55 to +150 C J stg SMMBT3904LT1G (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the MMBT3904LT3G SOT23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be SMMBT3904LT3G (PbFree) Reel assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please 3. Reference SOA curve. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2021 Rev. 14 MMBT3904LT1/DMMBT3904L, SMMBT3904L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS (Note 4) DC Current Gain H FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 300 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Input Impedance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 10 k CE C ie 4 Voltage Feedback Ratio (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 0.5 8.0 X 10 CE C re Small Signal Current Gain (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 100 400 CE C fe Output Admittance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 40 mhos CE C oe NF 5.0 dB Noise Figure (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k ohms, f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time t 35 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 200 s (V = 3.0 Vdc, CC ns I = 10 mAdc, I = I = 1.0 mAdc) C B1 B2 Fall Time t 50 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. +3 V +3 V DUTY CYCLE = 2% t 10 < t < 500 s 1 1 +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V 275 275 10 k 10 k 0 - 0.5 V C < 4 pF* C < 4 pF* < 1 ns S S 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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