DATA SHEET www.onsemi.com General Purpose Transistor COLLECTOR 3 NPN Silicon 1 BASE MMBT3904L, SMMBT3904L 2 Features EMITTER These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 S Prefix for Automotive and Other Applications Requiring Unique SOT23 (TO236) Site and Control Change Requirements AECQ101 Qualified and CASE 318 PPAP Capable 1 STYLE 6 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO 1AM M Collector Current Continuous I 200 mAdc C 1 Collector Current Peak (Note 3) I 900 mAdc CM THERMAL CHARACTERISTICS 1AM = Specific Device Code M = Date Code* Characteristic Symbol Max Unit = PbFree Package Total Device Dissipation FR5 Board P D (Note: Microdot may be in either location) (Note 1) T = 25C 225 mW A *Date Code orientation and/or overbar may Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate, (Note 2) ORDERING INFORMATION T = 25C 300 mW A Derate above 25C 2.4 mW/C Device Package Shipping Thermal Resistance, JunctiontoAmbient R 417 C/W JA MMBT3904LT1G SOT23 3000 / Tape & Junction and Storage Temperature T , T 55 to +150 C J stg SMMBT3904LT1G (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the MMBT3904LT3G SOT23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be SMMBT3904LT3G (PbFree) Reel assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. For information on tape and reel specifications, 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. including part orientation and tape sizes, please 3. Reference SOA curve. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2021 Rev. 14 MMBT3904LT1/DMMBT3904L, SMMBT3904L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB CEX ON CHARACTERISTICS (Note 4) DC Current Gain H FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 300 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 4.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF EB C ibo Input Impedance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 10 k CE C ie 4 Voltage Feedback Ratio (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 0.5 8.0 X 10 CE C re Small Signal Current Gain (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 100 400 CE C fe Output Admittance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 40 mhos CE C oe NF 5.0 dB Noise Figure (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k ohms, f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time t 35 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 200 s (V = 3.0 Vdc, CC ns I = 10 mAdc, I = I = 1.0 mAdc) C B1 B2 Fall Time t 50 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. +3 V +3 V DUTY CYCLE = 2% t 10 < t < 500 s 1 1 +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V 275 275 10 k 10 k 0 - 0.5 V C < 4 pF* C < 4 pF* < 1 ns S S 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit www.onsemi.com 2