MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 40 Vdc CBO 3 EmitterBase Voltage V 5.0 Vdc EBO 1 Collector Current Continuous I 200 mAdc C 2 Collector Current Peak (Note 3) I 800 mAdc CM SOT23 (TO236) THERMAL CHARACTERISTICS CASE 318 Characteristic Symbol Max Unit STYLE 6 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A MARKING DIAGRAM Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P 2A M D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, JunctiontoAmbient R 417 C/W JA 2A = Specific Device Code Junction and Storage Temperature T , T 65 to +150 C J stg M = Date Code* = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. *Date Code orientation and/or overbar may 1. FR5 = 1.0 0.75 0.062 in. vary depending upon manufacturing location. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. ORDERING INFORMATION Device Package Shipping MMBT3906LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT3906LT3G SOT23 10,000 / Tape & (PbFree) Reel SMMBT3906LT1G SOT23 3,000 / Tape & (PbFree) Reel SMMBT3906LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2017 Rev. 13 MMBT3906LT1/DMMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 4) DC Current Gain H FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10 EB C Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 12 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.1 10 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 100 400 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 3.0 60 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S SWITCHING CHARACTERISTICS Delay Time t 35 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 225 s (V = 3.0 Vdc, I = 10 mAdc, CC C ns I = I = 1.0 mAdc) B1 B2 Fall Time t 75 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2