MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit COLLECTOR CollectorEmitter Voltage V Vdc CEO 3 MMBT5088L 30 MMBT5089L 25 1 CollectorBase Voltage V Vdc CBO BASE MMBT5088L 35 MMBT5089L 30 2 EmitterBase Voltage V 4.5 Vdc EBO EMITTER Collector Current Continuous I 50 mAdc C MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1x M Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 556 C/W JA 1x = Device Code x = Q for MMBT5088L Total Device Dissipation Alumina P D SMMBT5088L Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C x = R for MMBT5089L SMMBT5089L Thermal Resistance, JunctiontoAmbient R 417 C/W JA M = Date Code* = PbFree Package Junction and Storage Temperature T , T 55 to +150 C J stg (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and/or overbar may device. If any of these limits are exceeded, device functionality should not be vary depending upon manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBT5088LT1G, SOT23 3,000 / Tape & SMMBT5088LT1G (PbFree) Reel NSVMMBT5088LT3G SOT23 10,000 / Tape & (PbFree) Reel MMBT5089LT1G, SOT23 3,000 / Tape & SMMBT5089LT1G (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 6 MMBT5088LT1/DMMBT5088L, MMBT5089L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT5088L 30 C B MMBT5089L 25 CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MMBT5088L 35 C E MMBT5089L 30 Collector Cutoff Current I nAdc CBO (V = 20 Vdc, I = 0) MMBT5088L 50 CB E (V = 15 Vdc, I = 0) MMBT5089L 50 CB E Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) MMBT5088L 50 EB(off) C (V = 4.5 Vdc, I = 0) MMBT5089L 100 EB(off) C ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 5.0 Vdc) MMBT5088L 300 900 C CE MMBT5089L 400 1200 (I = 1.0 mAdc, V = 5.0 Vdc) MMBT5088L 350 C CE MMBT5089L 450 (I = 10 mAdc, V = 5.0 Vdc) MMBT5088L 300 C CE MMBT5089L 400 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.8 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 500 Adc, V = 5.0 Vdc, f = 20 MHz) 50 C CE CollectorBase Capacitance C pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz emitter guarded) 4.0 CB E EmitterBase Capacitance C pF eb (V = 0.5 Vdc, I = 0, f = 1.0 MHz collector guarded) 10 EB C Small Signal Current Gain h fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) MMBT5088L 350 1400 C CE MMBT5089L 450 1800 Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 10 k , f = 1.0 kHz) MMBT5088L 3.0 C CE S MMBT5089L 2.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. R S i n e n IDEAL TRANSISTOR Figure 1. Transistor Noise Model www.onsemi.com 2