X-On Electronics has gained recognition as a prominent supplier of SMMBTA56LT3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMMBTA56LT3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMMBTA56LT3G ON Semiconductor

SMMBTA56LT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.SMMBTA56LT3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT SS DR XSTR SPCL TR
Datasheet: SMMBTA56LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
48: USD 0.1077 ea
Line Total: USD 5.17 
Availability - 303
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ: 48  Multiples: 1
Pack Size: 1
Availability Price Quantity
38800
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0411
30000 : USD 0.0395
50000 : USD 0.038
100000 : USD 0.0374
150000 : USD 0.0369
250000 : USD 0.0362
500000 : USD 0.0357

303
Ship by Tue. 31 Dec to Mon. 06 Jan
MOQ : 48
Multiples : 1
48 : USD 0.1077
72 : USD 0.0717
73 : USD 0.0711
144 : USD 0.0361
296 : USD 0.0176

7129
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1458
50 : USD 0.116
150 : USD 0.101
500 : USD 0.0898
2500 : USD 0.0676
5000 : USD 0.0632

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
LoadingGif
 
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We are delighted to provide the SMMBTA56LT3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMMBTA56LT3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 CollectorEmitter Voltage V Vdc CEO BASE MMBTA55 60 MMBTA56, SMMBTA56 80 2 CollectorBase Voltage V Vdc CBO EMITTER MMBTA55 60 MMBTA56, SMMBTA56 80 MARKING DIAGRAM EmitterBase Voltage V 4.0 Vdc EBO Collector Current Continuous I 500 mAdc C 2xx M THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A 2xx = Device Code Derate above 25C 1.8 mW/C x = H for MMBTA55LT1G xx = GM for MMBTA56LT1G, Thermal Resistance, JunctiontoAmbient R 556 C/W JA SMMBTA56LT1G Total Device Dissipation Alumina P D M = Date Code* Substrate, (Note 2) T = 25C 300 mW A = PbFree Package Derate above 25C 2.4 mW/C (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 417 C/W JA *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. See detailed ordering and shipping information in the package 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: April, 2018 Rev. 9 MMBTA55LT1/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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