MMBTA92L, SMMBTA92L, MMBTA93L High Voltage Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR Site and Control Change Requirements AECQ101 Qualified and 3 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol 92 93 Unit EMITTER CollectorEmitter Voltage V 300 200 Vdc CEO MARKING CollectorBase Voltage V 300 200 Vdc 3 CBO DIAGRAM EmitterBase Voltage V 5.0 5.0 Vdc EBO 1 Collector Current Continuous I 500 mAdc C 2 2x M DEVICE MARKING SOT23 (TO236AF) MMBTA92L, SMMBTA92L = 2D MMBTA93LT1 = 2E CASE 318 STYLE 6 THERMAL CHARACTERISTICS 2x = Specific Device Code Characteristic Symbol Max Unit M = Date Code* Total Device Dissipation FR5 Board P 225 mW D = PbFree Package (Note 1) T = 25C A (*Note: Microdot may be in either location) Derate above 25C 1.8 mW/C *Date Code orientation and/or overbar may Thermal Resistance, Junction to Ambient R 556 C/W JA vary depending upon manufacturing location. Total Device Dissipation (Note 2) P 300 mW D (2) Alumina Substrate, T = 25C A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, Junction to Ambient R 417 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to C J stg MMBTA92LT1G SOT23 3000 / Tape & Reel +150 (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBTA92LT1G SOT23 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. MMBTA92LT3G SOT23 10000 / Tape & Reel 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. (PbFree) SMMBTA92LT3G SOT23 10000 / Tape & Reel (PbFree) MMBTA93LT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 11 MMBTA92LT1/DMMBTA92L, SMMBTA92L, MMBTA93L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBTA92, SMMBTA92 300 C B MMBTA93 200 CollectorBase Breakdown Voltage V Vdc (BR)CBO 300 (I = 100 Adc, I = 0) MMBTA92, SMMBTA92 C E 200 MMBTA93 EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) MMBTA92, SMMBTA92 0.25 CB E (V = 160 Vdc, I = 0) MMBTA93 0.25 CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 3.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) Both Types 25 C CE (I = 10 mAdc, V = 10 Vdc) Both Types 40 C CE (I = 30 mAdc, V = 10 Vdc) MMBTA92, SMMBTA92 25 C CE MMBTA93 25 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) MMBTA92, SMMBTA92 0.5 C B MMBTA93 0.5 BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) MMBTA92, SMMBTA92 6.0 CB E MMBTA93 8.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 300 V = 10 Vdc CE T = +125C J 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE