MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in lineoperated applications such as low power, lineoperated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High CollectorEmitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V0 0.125 in 300 VOLTS, 2.75 WATTS S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and C 2,4 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* B 1 E 3 Schematic MARKING DIAGRAM 4 SOT223 AYW CASE 318E T350 1 2 STYLE 1 3 A = Assembly Location Y = Year W = Work Week = PbFree Package T350 = Device Code (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping MMJT350T1G SOT223 1,000 / Tape & Reel (PbFree) SMMJT350T1G SOT223 1,000 / Tape & Reel (PbFree) SMMJT350T3G SOT223 4,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: January, 2019 Rev. 8 MMJT350T1/DMMJT350 MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Value Unit CollectorEmitter Voltage V 300 Vdc CEO CollectorBase Voltage V 300 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 0.5 Adc C Collector Current Peak I 0.75 Adc CM Total Power Dissipation P D T = 25C 2.75 W C Derate above 25C 22 mW/C Total P T = 25C mounted on 1 sq. (645 sq. mm) Collector pad on FR4 bd material 1.40 W D A Total P T = 25C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material 0.65 W D A Operating and Storage Junction Temperature Range T , T 55 to +150 C J stg ESD Human Body Model HBM 3B V ESD Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance C/W JunctiontoCase R 45 JC JunctiontoAmbient on 1 sq. (645 sq. mm) Collector pad on FR4 bd material R 85 JA JunctiontoAmbient on 0.012 sq. (7.6 sq. mm) Collector pad on FR4 bd material R 190 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(SUS (I = 1.0 mAdc, I = 0 Adc) 300 C B ) CollectorBase Current I nAdc CBO (V = Rated V , V = 0) 100 CB CBO EB Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc) 100 BE ON CHARACTERISTICS DC Current Gain h FE (I = 50 mAdc, V = 10 Vdc) 30 240 C CE (I = 100 mAdc, V = 10 Vdc) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2