X-On Electronics has gained recognition as a prominent supplier of SNSS35200MR6T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SNSS35200MR6T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SNSS35200MR6T1G ON Semiconductor

SNSS35200MR6T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.SNSS35200MR6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SSP LOW VCES 30V NPN XTR
Datasheet: SNSS35200MR6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 6000
6000 : USD 0.2594
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.5245
10 : USD 0.4713
100 : USD 0.3625
500 : USD 0.3167
1000 : USD 0.2768
3000 : USD 0.232
9000 : USD 0.2252
24000 : USD 0.2252
45000 : USD 0.2241
N/A

Obsolete
   
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We are delighted to provide the SNSS35200MR6T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SNSS35200MR6T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NSS35200MR6T1G 35 V, 5 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS35200MR6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 625 mW A Derate above 25C 5.0 mW/C Thermal Resistance, C/W R (Note 1) JA Junction toAmbient 200 Total Device Dissipation P (Note 2) D T = 25C 1.0 W A Derate above 25C 8.0 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 120 Thermal Resistance, R C/W JL JunctiontoLead 1 80 Total Device Dissipation P W Dsingle (Single Pulse < 10 sec.) (Notes 2 & 3) 1.75 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 X 1.0 inch Pad. 3. Refer to Figure 8.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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