PZT3904T1G General Purpose Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique PZT3904T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 60 C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 E C (BR)EBO Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB BL Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 CE EB CEX ON CHARACTERISTICS (Note 3) DC Current Gain (Note 2) H FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage (Note 3) V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B BaseEmitter Saturation Voltage (Note 3) V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) f 300 MHz C CE T Output Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 5.0 pF CB E obo Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 8.0 EB C ibo Input Impedance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 10 k CE C ie 4 Voltage Feedback Ratio (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 0.5 8.0 X 10 CE C re SmallSignal Current Gain (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 100 400 CE C fe Output Admittance (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) h 1.0 40 Mhos CE C oe Noise Figure (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) nF 5.0 dB CE C S SWITCHING CHARACTERISTICS Delay Time t 35 ns d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 200 s (V = 3.0 Vdc, CC I = 10 mAdc, I = I = 1.0 mAdc) C B1 B2 Fall Time t 50 f 2. FR5 = 1.0 0.75 0.062 in. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. +3 V +3 V DUTY CYCLE = 2% t 10 < t < 500 s 1 1 +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V 275 275 10 k 10 k 0 - 0.5 V C < 4 pF* C < 4 pF* < 1 ns S S 1N916 - 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit