PZTA42T1G High Voltage Transistor Surface Mount NPN Silicon www.onsemi.com Features PZTA42T1G is Complement to PZTA92T1G SOT223 PACKAGE S Prefix for Automotive and Other Applications Requiring Unique NPN SILICON Site and Control Change Requirements AECQ101 Qualified and PPAP Capable HIGH VOLTAGE TRANSISTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS SURFACE MOUNT Compliant COLLECTOR 2, 4 MAXIMUM RATINGS (T = 25C unless otherwise noted) C BASE Rating Symbol Value Unit 1 CollectorEmitter Voltage V Vdc CEO (Open Base) 300 EMITTER 3 CollectorBase Voltage V Vdc CBO (Open Emitter) 300 4 EmitterBase Voltage V Vdc EBO (Open Collector) 6.0 1 2 3 Collector Current (DC) I 500 mAdc C SOT223 Total Power Dissipation P W D CASE 318E T = 25C (Note 1) 1.5 A STYLE 1 Storage Temperature Range T 65 to +150 C stg MARKING DIAGRAM Junction Temperature T 150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AYW 1. Device mounted on a FR4 glass epoxy printed circuit board P1D 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit P1D = Specific Device Code A = Assembly Location Thermal Resistance, R C/W JA Y = Year JunctiontoAmbient (Note 2) 83.3 W = Work Week 2. Device mounted on a FR4 glass epoxy printed circuit board = PbFree Package 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping PZTA42T1G SOT223 1,000 / Tape & Reel (PbFree) SPZTA42T1G SOT223 1,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2017 Rev. 12 PZTA42T1/DPZTA42T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 300 C B Collector-Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 300 C E Emitter-Base Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) 6.0 E C Collector-Base Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) 0.1 CB E Emitter-Base Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 40 C CE DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 50 C CE Feedback Capacitance C pF re (V = 20 Vdc, I = 0, f = 1.0 MHz) 3.0 CB E Collector-Emitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) 0.5 C B Base-Emitter Saturation Voltage V Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) 0.9 C B 3. Pulse Test Conditions, t = 300 s, 0.02. p 120 V = 10 Vdc CE T = +125C J 100 80 25C 60 40 -55C 20 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE