DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO923 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B PushPull Operation Complementary to SS8050 TO923 Collector Current: I = 1.5 A CASE 135AR C 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 3. Collector Parameter Symbol Value Unit CollectorBase Voltage V 40 V CBO MARKING DIAGRAM CollectorEmitter Voltage V 25 V CEO EmitterBase Voltage V 6 V EBO AS8 Collector Current I 1.5 A C 550x Junction Temperature T 150 C YWW J Storage Temperature T 65 to 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. S8550x = Specific Device Code Line 1: A = Assembly Location THERMAL CHARACTERISTICS (Note 1) Line 2: x = C or D (T = 25C unless otherwise noted) Line 3: Y = Year A WW= Work Week Parameter Symbol Value Unit Power Dissipation P 1 W D ORDERING INFORMATION Power Dissipation Derate Above 25C P 8 mW/C D See detailed ordering and shipping information on page 2 of Thermal Resistance, R 125 C/W JA this data sheet. JunctiontoAmbient 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 3 SS8550/DSS8550 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 40 V CBO C E BV CollectorEmitter Breakdown Voltage I = 2 mA, I = 0 25 V CEO C B BV EmitterBase Breakdown Voltage I = 100 A, I = 0 6 V EBO E C I Collector CutOff Current V = 35 V, I = 0 100 nA CBO CB E I Emitter CutOff Current V = 6 V, I = 0 100 nA EBO EB C h DC Current Gain V = 1 V, I = 5 mA 45 170 FE1 CE C h V = 1 V, I = 100 mA 85 160 300 FE2 CE C h V = 1 V, I = 800 mA 40 80 FE3 CE C V (sat) CollectorEmitter Saturation Voltage I = 800 mA, I = 80 mA 0.28 0.50 V CE C B V (sat) BaseEmitter Saturation Voltage I = 800 mA, I = 80 mA 0.98 1.20 V BE C B V (on) BaseEmitter On Voltage V = 1 V, I = 10 mA 0.66 1.00 V BE CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 15 pF ob CB E f Current Gain Bandwidth Product V = 10 V, I = 50 mA 100 200 MHz T CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification C D h 120 ~ 200 160 ~ 300 FE2 ORDERING INFORMATION Part Number Top Mark Package Shipping SS8550CBU S8550C TO923, case 135AN (PbFree) 10,000 Units/ Bulk Box SS8550CTA S8550C TO923, case 135AR (PbFree) 2,000 Units/ FanFold SS8550DBU S8550D TO923, case 135AN (PbFree) 10,000 Units/ Bulk Box SS8550DTA S8550D TO923, case 135AR (PbFree) 2,000 Units/ FanFold www.onsemi.com 2