X-On Electronics has gained recognition as a prominent supplier of SS8550CTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SS8550CTA Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SS8550CTA ON Semiconductor

SS8550CTA electronic component of ON Semiconductor
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See Product Specifications
Part No.SS8550CTA
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 25 V 1.5 A 200MHz 1 W Through Hole TO-92-3
Datasheet: SS8550CTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0733 ea
Line Total: USD 146.6 
Availability - 9700
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 2000
Multiples : 1
2000 : USD 0.0733
4000 : USD 0.0703
8000 : USD 0.0691
26000 : USD 0.0649
50000 : USD 0.0639
100000 : USD 0.063
150000 : USD 0.062
250000 : USD 0.0611

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SS8550CTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS8550CTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor TO923 CASE 135AN SS8550 1 2 3 Features 2 W Output Amplifier of Portable Radios in Class B PushPull Operation Complementary to SS8050 TO923 Collector Current: I = 1.5 A CASE 135AR C 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 3 Compliant 1. Emitter 2. Base ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 3. Collector Parameter Symbol Value Unit CollectorBase Voltage V 40 V CBO MARKING DIAGRAM CollectorEmitter Voltage V 25 V CEO EmitterBase Voltage V 6 V EBO AS8 Collector Current I 1.5 A C 550x Junction Temperature T 150 C YWW J Storage Temperature T 65 to 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. S8550x = Specific Device Code Line 1: A = Assembly Location THERMAL CHARACTERISTICS (Note 1) Line 2: x = C or D (T = 25C unless otherwise noted) Line 3: Y = Year A WW= Work Week Parameter Symbol Value Unit Power Dissipation P 1 W D ORDERING INFORMATION Power Dissipation Derate Above 25C P 8 mW/C D See detailed ordering and shipping information on page 2 of Thermal Resistance, R 125 C/W JA this data sheet. JunctiontoAmbient 1. PCB size: FR4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: August, 2021 Rev. 3 SS8550/DSS8550 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 40 V CBO C E BV CollectorEmitter Breakdown Voltage I = 2 mA, I = 0 25 V CEO C B BV EmitterBase Breakdown Voltage I = 100 A, I = 0 6 V EBO E C I Collector CutOff Current V = 35 V, I = 0 100 nA CBO CB E I Emitter CutOff Current V = 6 V, I = 0 100 nA EBO EB C h DC Current Gain V = 1 V, I = 5 mA 45 170 FE1 CE C h V = 1 V, I = 100 mA 85 160 300 FE2 CE C h V = 1 V, I = 800 mA 40 80 FE3 CE C V (sat) CollectorEmitter Saturation Voltage I = 800 mA, I = 80 mA 0.28 0.50 V CE C B V (sat) BaseEmitter Saturation Voltage I = 800 mA, I = 80 mA 0.98 1.20 V BE C B V (on) BaseEmitter On Voltage V = 1 V, I = 10 mA 0.66 1.00 V BE CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 15 pF ob CB E f Current Gain Bandwidth Product V = 10 V, I = 50 mA 100 200 MHz T CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification C D h 120 ~ 200 160 ~ 300 FE2 ORDERING INFORMATION Part Number Top Mark Package Shipping SS8550CBU S8550C TO923, case 135AN (PbFree) 10,000 Units/ Bulk Box SS8550CTA S8550C TO923, case 135AR (PbFree) 2,000 Units/ FanFold SS8550DBU S8550D TO923, case 135AN (PbFree) 10,000 Units/ Bulk Box SS8550DTA S8550D TO923, case 135AR (PbFree) 2,000 Units/ FanFold www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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