X-On Electronics has gained recognition as a prominent supplier of SS9013FBU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SS9013FBU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SS9013FBU ON Semiconductor

SS9013FBU electronic component of ON Semiconductor
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See Product Specifications
Part No.SS9013FBU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT NPN40V500MA
Datasheet: SS9013FBU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2041 ea
Line Total: USD 0.2 
Availability - 48
Ship by Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
48
Ship by Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2041
10 : USD 0.1021
50 : USD 0.0919
250 : USD 0.0765
500 : USD 0.0689

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SS9013FBU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS9013FBU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (P =625mW) T High Collector Current. (I =500mA) C Complementary to SS9012 Excellent h linearity. FE TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100 A, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 20 V CEO C B BV Emitter-Base Breakdown Voltage I =100 A, I =0 5 V EBO E C I Collector Cut-off Current V =25V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =3V, I =0 100 nA EBO EB C h DC Current Gain V =1V, I =50mA 64 120 202 FE1 CE C h V =1V, I =500mA 40 120 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.16 0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I =500mA, I =50mA 0.91 1.2 V BE C B V (on) Base-Emitter On Voltage V =1V, I =10mA 0.6 0.67 0.7 V BE CE C h Classification FE Classification D E F G H h 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202 FE1 2002 Fairchild Semiconductor Corporation Rev. A4, November 2002SS9013 Typical Characteristics 20 1000 I = 160 A B I = 140 A V = 1V CE 18 B I = 120 A 16 B 14 I = 100 A B 100 12 I = 80 A B 10 I = 60 A 8 B 10 6 I = 40 A B 4 I = 20 A B 2 0 1 0 1020 304050 1 10 100 1000 10000 V V , COLLECTOR-EMITTER VOLTAGE CE IC mA , COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10000 1000 I = 10 I C B VCE = 6V 1000 100 V (sat) BE 100 10 V (sat) CE 1 10 1 10 100 1000 10000 1 10 100 1000 10000 I mA , COLLECTOR CURRENT C I mA , COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product Collector-Emitter Saturation Voltage 2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 V (sat), V (sat) mV , SATURATION VOLTAGE I mA , COLLECTOR CURRENT BE CE C h , DC CURRENT GAIN FE fT MHz , CURRENT GAIN BANDWIDTH PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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