X-On Electronics has gained recognition as a prominent supplier of SSVBC846BPDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SSVBC846BPDW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SSVBC846BPDW1T1G ON Semiconductor

SSVBC846BPDW1T1G electronic component of ON Semiconductor
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Part No.SSVBC846BPDW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor Array Surface Mount SC-88/SC70-6/SOT-363
Datasheet: SSVBC846BPDW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.437 ea
Line Total: USD 0.44 
Availability - 11724
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11724
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.437
10 : USD 0.2657
100 : USD 0.1242
1000 : USD 0.1081
3000 : USD 0.0816
9000 : USD 0.0794
24000 : USD 0.0679
45000 : USD 0.0667

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSVBC846BPDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSVBC846BPDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is SOT363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Q Q 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIMUM RATINGS NPN MARKING DIAGRAM Rating Symbol Value Unit 6 Collector-Emitter Voltage V V CEO BC846, SBC846 65 BC847, SBC847 45 XX M BC848 30 Collector-Base Voltage V V CBO 1 BC846, SBC846 80 BC847, SBC847 50 XX = Device Code BC848 30 M = Date Code = PbFree Package EmitterBase Voltage V 6.0 V EBO (Note: Microdot may be in either location) Collector Current Continuous I 100 mAdc C Collector Current Peak I 200 mAdc CM ORDERING INFORMATION MAXIMUM RATINGS PNP Device Mark Package Shipping Rating Symbol Value Unit BC846BPDW1T1G, BB SOT363 3,000 / SBC846BPDW1T1G Collector-Emitter Voltage V V (PbFree) Tape & Reel CEO BC846, SBC846 65 SBC846BPDW1T2G BB SOT363 3,000 / BC847, SBC847 45 (PbFree) Tape & Reel BC848 30 BC847BPDW1T1G BF SOT363 3,000 / Collector-Base Voltage V V CBO (PbFree) Tape & Reel BC846, SBC846 80 BC847, SBC847 50 SBC847BPDW1T1G SOT363 3,000 / BF BC848 30 (PbFree) Tape & Reel EmitterBase Voltage V 6.0 V EBO SBC847BPDW1T3G SOT363 10,000 / BF (PbFree) Tape & Reel Collector Current Continuous I 100 mAdc C BC847BPDW1T2G BF SOT363 3,000 / Collector Current Peak I 200 mAdc CM (PbFree) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the BC848CPDW1T1G BL SOT363 3,000 / device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 12 BC846BPDW1T1/DBC846BPDW1, BC847BPDW1, BC848CPDW1 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device P D FR5 Board (Note 1) 380 mW T = 25C 250 mW/C A Derate above 25C 3.0 mW/C Thermal Resistance, JunctiontoAmbient R 328 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (NPN) (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) C BC846, SBC846 Series 65 BC847, SBC847 Series 45 BC848 Series 30 CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) C EB BC846, SBC846 Series 80 BC847B, SBC847B Only 50 BC848 Series 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) C 80 BC846, SBC846 Series BC847, SBC847 Series 50 BC848 Series 30 EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) E BC846, SBC846 Series 6.0 BC847, SBC847 Series 6.0 BC848 Series 6.0 Collector Cutoff Current I CBO (V = 30 V) 15 nA CB (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) C CE BC846B, SBC846B, BC847B, SBC847B 150 270 BC848C (I = 2.0 mA, V = 5.0 V) C CE BC846B, SBC846B, BC847B, SBC84B7 200 290 475 BC848C 420 520 800 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) All devices except SBC847BPDW1T1G 0.25 C B SBC847BPDW1T1G only 0.1 (I = 100 mA, I = 5.0 mA) All devices 0.6 C B (I = 2 mA, I = 0.5 mA) SBC847BPDW1T1G only 0.024 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage V mV BE(on) (I = 2.0 mA, V = 5.0 V) 580 660 700 C CE (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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