BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors www.onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT363/SC88 which is SOT363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable Q Q 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant (4) (5) (6) MAXIMUM RATINGS NPN MARKING DIAGRAM Rating Symbol Value Unit 6 Collector-Emitter Voltage V V CEO BC846, SBC846 65 BC847, SBC847 45 XX M BC848 30 Collector-Base Voltage V V CBO 1 BC846, SBC846 80 BC847, SBC847 50 XX = Device Code BC848 30 M = Date Code = PbFree Package EmitterBase Voltage V 6.0 V EBO (Note: Microdot may be in either location) Collector Current Continuous I 100 mAdc C Collector Current Peak I 200 mAdc CM ORDERING INFORMATION MAXIMUM RATINGS PNP Device Mark Package Shipping Rating Symbol Value Unit BC846BPDW1T1G, BB SOT363 3,000 / SBC846BPDW1T1G Collector-Emitter Voltage V V (PbFree) Tape & Reel CEO BC846, SBC846 65 SBC846BPDW1T2G BB SOT363 3,000 / BC847, SBC847 45 (PbFree) Tape & Reel BC848 30 BC847BPDW1T1G BF SOT363 3,000 / Collector-Base Voltage V V CBO (PbFree) Tape & Reel BC846, SBC846 80 BC847, SBC847 50 SBC847BPDW1T1G SOT363 3,000 / BF BC848 30 (PbFree) Tape & Reel EmitterBase Voltage V 6.0 V EBO SBC847BPDW1T3G SOT363 10,000 / BF (PbFree) Tape & Reel Collector Current Continuous I 100 mAdc C BC847BPDW1T2G BF SOT363 3,000 / Collector Current Peak I 200 mAdc CM (PbFree) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the BC848CPDW1T1G BL SOT363 3,000 / device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 12 BC846BPDW1T1/DBC846BPDW1, BC847BPDW1, BC848CPDW1 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation Per Device P D FR5 Board (Note 1) 380 mW T = 25C 250 mW/C A Derate above 25C 3.0 mW/C Thermal Resistance, JunctiontoAmbient R 328 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS (NPN) (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) C BC846, SBC846 Series 65 BC847, SBC847 Series 45 BC848 Series 30 CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) C EB BC846, SBC846 Series 80 BC847B, SBC847B Only 50 BC848 Series 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) C 80 BC846, SBC846 Series BC847, SBC847 Series 50 BC848 Series 30 EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) E BC846, SBC846 Series 6.0 BC847, SBC847 Series 6.0 BC848 Series 6.0 Collector Cutoff Current I CBO (V = 30 V) 15 nA CB (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) C CE BC846B, SBC846B, BC847B, SBC847B 150 270 BC848C (I = 2.0 mA, V = 5.0 V) C CE BC846B, SBC846B, BC847B, SBC84B7 200 290 475 BC848C 420 520 800 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) All devices except SBC847BPDW1T1G 0.25 C B SBC847BPDW1T1G only 0.1 (I = 100 mA, I = 5.0 mA) All devices 0.6 C B (I = 2 mA, I = 0.5 mA) SBC847BPDW1T1G only 0.024 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage V mV BE(on) (I = 2.0 mA, V = 5.0 V) 580 660 700 C CE (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S www.onsemi.com 2