TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 6 AMPERE Designed for use in general purpose amplifier and switching applications. COMPLEMENTARY SILICON POWER TRANSISTORS Features Epoxy Meets UL 94 V0 0.125 in 406080100 VOLTS, These Devices are PbFree and are RoHS Compliant* 65 WATTS MAXIMUM RATINGS PNP NPN Rating Symbol Value Unit COLLECTOR COLLECTOR 2,4 2,4 CollectorEmitter Voltage V Vdc CEO TIP41G, TIP42G 40 TIP41AG, TIP42AG 60 1 1 TIP41BG, TIP42BG 80 TIP41CG, TIP42CG 100 BASE BASE CollectorBase Voltage V Vdc CB 3 TIP41G, TIP42G 40 3 TIP41AG, TIP42AG 60 EMITTER EMITTER TIP41BG, TIP42BG 80 TIP41CG, TIP42CG 100 4 EmitterBase Voltage V 5.0 Vdc EB TO220 Collector Current Continuous I 6.0 Adc C CASE 221A Collector Current Peak I 10 Adc CM STYLE 1 Base Current I 2.0 Adc B 1 2 Total Power Dissipation P D 3 T = 25C 65 W C Derate above 25C 0.52 W/C MARKING DIAGRAM Total Power Dissipation P D T = 25C 2.0 W A Derate above 25C 0.016 W/C Unclamped Inductive Load Energy E 62.5 mJ (Note 1) TIP4xxG AYWW Operating and Storage Junction, T , T 65 to +150 C J stg Temperature Range ESD Human Body Model HBM 3B V ESD Machine Model MM C V TIP4xx = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the xx = 1, 1A, 1B, 1C device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2, 2A, 2B, 2C 1. I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 . A = Assembly Location C CC BE Y = Year WW = Work Week G=PbFree Package *For additional information on our PbFree strategy and soldering details, please download the ONSemiconductor Soldering and Mounting Techniques ORDERING INFORMATION Reference Manual, SOLDERRM/D. See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2014 Rev. 11 TIP41A/DTIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG, TIP42CG (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.67 C/W JC Thermal Resistance, JunctiontoAmbient R 57 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B TIP41G, TIP42G 40 TIP41AG, TIP42AG 60 TIP41BG, TIP42BG 80 TIP41CG, TIP42CG 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) CE B TIP41G, TIP41AG, TIP42G, TIP42AG 0.7 (V = 60 Vdc, I = 0) CE B TIP41BG, TIP41CG, TIP42BG, TIP42CG 0.7 Collector Cutoff Current I Adc CES (V = 40 Vdc, V = 0) CE EB TIP41G, TIP42G 400 (V = 60 Vdc, V = 0) CE EB TIP41AG, TIP42AG 400 (V = 80 Vdc, V = 0) CE EB TIP41BG, TIP42BG 400 (V = 100 Vdc, V = 0) CE EB TIP41CG, TIP42CG 400 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 1.0 mAdc BE C EBO ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.3 Adc, V = 4.0 Vdc) 30 C CE (I = 3.0 Adc, V = 4.0 Vdc) 15 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 6.0 Adc, I = 600 mAdc) 1.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 6.0 Adc, V = 4.0 Vdc) 2.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE test SmallSignal Current Gain h fe (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2