TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. www.onsemi.com Features Popular TO220 Plastic Package 1.0 AMPERE Complementary to the MJE5730 and MJE5731 Series POWER TRANSISTORS These Devices are PbFree and are RoHS Compliant* NPN SILICON 250 300 400 VOLTS MAXIMUM RATINGS 40 WATTS Rating Symbol TIP47 TIP48 TIP50 Unit Collector Emitter Voltage V 250 300 400 Vdc CEO COLLECTOR Collector Base Voltage V 350 400 500 Vdc CB 2,4 Emitter Base Voltage V 5.0 Vdc EB Collector Current Continuous I 1.0 Adc C 1 Collector Current Peak I 2.0 Adc BASE CM Base Current I 0.6 Adc B 3 Total Power Dissipation P EMITTER D T = 25 C 40 C W Derate above 25 C 0.32 W/ C Total Power Dissipation P MARKING D T = 25 C 2.0 C W DIAGRAM Derate above 25 C 0.016 W/ C Unclamped Inducting Load E 20 mJ 4 Energy (See Figure 8) Operating and Storage T , T 65 to +150 C J stg TIPxxG Junction Temperature Range AYWW TO220AB Stresses exceeding those listed in the Maximum Ratings table may damage the CASE 221A device. If any of these limits are exceeded, device functionality should not be STYLE 1 assumed, damage may occur and reliability may be affected. 1 2 3 THERMAL CHARACTERISTICS TIPxx = Device Code Characteristic Symbol Max Unit xx = 47, 48, or 50 A = Assembly Location Thermal Resistance, R 3.125 C/W JC Y = Year JunctiontoCase WW = Work Week Thermal Resistance, R 62.5 C/W G = PbFree Package JA JunctiontoAmbient ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2014 Rev. 11 TIP47/DTIP47G, TIP48G, TIP50G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) TIP47 V 250 Vdc CEO(sus) (I = 30 mAdc, I = 0) TIP48 300 C B TIP50 400 Collector Cutoff Current I mAdc CEO (V = 150 Vdc, I = 0) TIP47 CE B 1.0 (V = 200 Vdc, I = 0) TIP48 CE B 1.0 (V = 300 Vdc, I = 0) TIP50 CE B 1.0 Collector Cutoff Current I mAdc CES (V = 350 Vdc, V = 0) TIP47 CE BE 1.0 (V = 400 Vdc, V = 0) TIP48 CE BE 1.0 (V = 500 Vdc, V = 0) TIP50 CE BE 1.0 Emitter Cutoff Current I 1.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.3 Adc, V = 10 Vdc) C CE 30 150 (I = 1.0 Adc, V = 10 Vdc) C CE 10 CollectorEmitter Saturation Voltage V 1.0 Vdc CE(sat) (I = 1.0 Adc, I = 0.2 Adc) C B BaseEmitter On Voltage V 1.5 Vdc BE(on) (I = 1.0 Adc, V = 10 Vdc) C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 10 MHz T (I = 0.1 Adc, V = 10 Vdc, f = 2.0 MHz) C CE SmallSignal Current Gain h 25 fe (I = 0.2 Adc, V = 10 Vdc, f = 1.0 kHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping TIP47G TO220 50 Units / Rail (PbFree) TIP48G TO220 50 Units / Rail (PbFree) TIP49G TO220 50 Units / Rail (PbFree) TIP50G TO220 50 Units / Rail (PbFree) www.onsemi.com 2