TN2907A PNP General Purpose Amplifier September 2007 TN2907A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 800 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN2907A Rev. 1.0.0 1 TN2907A PNP General Purpose Amplifier Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = 10A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10A, I = 0 60 V (BR)EBO C E V Collector-Emitter Breakdown Voltage I = 10mA, I = 0 5 V (BR)CEO C E I Collector Cut-off Current V = 50 V, IE = 0 10 nA CBO CB V = 50 V, IE = 0, TA = 150C 10 A CB I Collector Cut-off Current V = 30 V, VBE = 0.5 V 50 nA CEX CE On Characteristics h DC Current Gain IC = 0.1 mA, VCE = 10 V 75 FE IC = 1.0 mA, VCE = 10 V 100 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V* 100 300 IC = 500 mA, VCE = 10 V* 50 V (sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 0.4 V CE IC = 500 mA, IB = 50 mA* 1.6 V V (sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 1.3 V BE IC = 500 mA, IB = 50 mA 2.6 V Small Signal Characteristics VCB = 10 V, IE = 0, f = 100 kHz Cobo Output Capacitance 8.0 pF VEB = 2.0 V, IC = 0, f = 100 kHz Cibo Input Capacitance 30 pF * Pulse Test: Pulse Width 300ms, Duty Cycle = 2% NOTES: 1) All voltages (V) and currents (A) are negative polarity for PNP transistors. 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN2907A Rev. 1.0.0 2