X-On Electronics has gained recognition as a prominent supplier of TN2907A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TN2907A Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TN2907A ON Semiconductor

TN2907A electronic component of ON Semiconductor
TN2907A ON Semiconductor
TN2907A Bipolar Transistors - BJT
TN2907A  Semiconductors

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See Product Specifications
Part No. TN2907A
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 60V 0.8A 3-Pin TO-226 Bulk
Datasheet: TN2907A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1233: USD 0.3303 ea
Line Total: USD 407.26 
Availability - 0
MOQ: 1233  Multiples: 1233
Pack Size: 1233
Availability Price Quantity
0
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 1233
Multiples : 1233
1233 : USD 0.3303

0
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.1624
3000 : USD 0.141

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2907A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2907A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TN2907A PNP General Purpose Amplifier September 2007 TN2907A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from process 63. 1 TO-226 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 800 mA C T , T Operating and Storage Junction Temperature Range -55 ~ 150 C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN2907A Rev. 1.0.0 1 TN2907A PNP General Purpose Amplifier Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = 10A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10A, I = 0 60 V (BR)EBO C E V Collector-Emitter Breakdown Voltage I = 10mA, I = 0 5 V (BR)CEO C E I Collector Cut-off Current V = 50 V, IE = 0 10 nA CBO CB V = 50 V, IE = 0, TA = 150C 10 A CB I Collector Cut-off Current V = 30 V, VBE = 0.5 V 50 nA CEX CE On Characteristics h DC Current Gain IC = 0.1 mA, VCE = 10 V 75 FE IC = 1.0 mA, VCE = 10 V 100 IC = 10 mA, VCE = 10 V 100 IC = 150 mA, VCE = 10 V* 100 300 IC = 500 mA, VCE = 10 V* 50 V (sat) Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 0.4 V CE IC = 500 mA, IB = 50 mA* 1.6 V V (sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA* 1.3 V BE IC = 500 mA, IB = 50 mA 2.6 V Small Signal Characteristics VCB = 10 V, IE = 0, f = 100 kHz Cobo Output Capacitance 8.0 pF VEB = 2.0 V, IC = 0, f = 100 kHz Cibo Input Capacitance 30 pF * Pulse Test: Pulse Width 300ms, Duty Cycle = 2% NOTES: 1) All voltages (V) and currents (A) are negative polarity for PNP transistors. 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com TN2907A Rev. 1.0.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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