TN3019A TN3019A TO-226 C B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 80 V CEO V Collector-Base Voltage 140 V CBO V Emitter-Base Voltage 7.0 V EBO I Collector Current - Continuous 1.0 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units TN3019A P Total Device Dissipation 1.0 W D Derate above 25C 8.0 mW/C Thermal Resistance, Junction to Case 125 R C/W JC R Thermal Resistance, Junction to Ambient 50 C/W JA 1997 Fairchild Semiconductor CorporationTN3019A NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 30 mA, I = 080V (BR)CEO C B V Collector-Base Breakdown Voltage 140 V I = 100 A, I = 0 (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 A, I = 0 7.0 V (BR)EBO E C I Collector-Cutoff Current V = 90 V, I = 0 0.01 A CBO CB E V = 90 V, I = 0, T = 150 C 10 A CB E A I Emitter-Cutoff Current V = 5.0 V, I = 0 0.01 A EBO EB C ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 10 V 50 I = 10 mA, V = 10 V 90 C CE I = 150 mA, V = 10 V 100 300 C CE 40 I =150 mA,V =10 V,T =-55C C CE A 50 I = 500 mA, V = 10 V* C CE I = 1.0 A, V = 10 V* 15 C CE Collector-Emitter Saturation Voltage I = 150 mA, I = 15 mA 0.2 V V C B CE(sat) IC = 500 mA, IB = 50 mA 0.5 V Base-Emitter Saturation Voltage I = 10 mA, I = 15 mA 1.1 V V C B BE(sat) SMALL SIGNAL CHARACTERISTICS f Current Gain - Bandwidth Product I = 50 mA, V = 10 V, 100 MHz T C CE f = 20 MHz Output Capacitance V = 10 V, I = 0, f = 1.0 MHz 12 pF C CB E obo C Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 60 pF ibo Small-Signal Current Gain I = 1.0 mA, V = 5.0 V, 80 400 h C CE fe f = 1.0 kHz rbC Collector Base Time Constant IE = 10 mA, VCB = 10 V, 400 pS c f = 4.0 MHz NF Noise Figure I = 100 mA, V = 10 V, 4.0 dB C CE RS = 1.0 k , f = 1.0 kHz *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%