TN6719A Discrete POWER & Signal Technologies TN6719A TO-226 C B E NPN High Voltage Amplifier This device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 300 V CEO VCBO Collector-Base Voltage 300 V V Emitter-Base Voltage 7.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units TN6719A P Total Device Dissipation 1.0 W D 8.0 Derate above 25C mW/C R Thermal Resistance, Junction to Case 125 C/W JC Thermal Resistance, Junction to Ambient 50 C/W RJA 1997 Fairchild Semiconductor CorporationTN6719A NPN High Voltage Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 300 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100 A, I = 0 300 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 1.0 mA, I = 0 7.0 V (BR)EBO E C I Collector Cutoff Current V = 200 V, I = 0 100 nA CBO CB E I Emitter Cutoff Current V = 6.0 V, I = 0 100 nA EBO EB C ON CHARACTERISTICS* h DC Current Gain V = 10 V, I = 1.0 mA 25 FE CE C V = 10 V, I = 10 mA 40 CE C V = 10 V, I = 30 mA 40 200 CE C Collector-Emitter Saturation Voltage I = 30 mA, I = 3.0 mA 0.75 V V C B CE(sat) Base-Emitter On Voltage V = 10 V, I = 30 mA 0.85 V V CE C BE(on) SMALL SIGNAL CHARACTERISTICS Collector-Base Capacitance V = 20 V, f = 1.0 MHz 3.5 pF C CB cb Small-Signal Current Gain I = 15 mA, V = 100 V, 1.5 15 h C CE fe f = 20 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%