TN6726A / NZT6726 TN6726A NZT6726 C E C B TO-226 C B SOT-223 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 T , T C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units TN6726A *NZT6726 P Total Device Dissipation 1.0 1.0 W D Derate above 25 C 8.0 8.0 mW/ C Thermal Resistance, Junction to Case 50 R C/W JC R Thermal Resistance, Junction to Ambient 125 125 C/W JA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm mounting pad for the collector lead min. 6 cm . 1997 Fairchild Semiconductor CorporationTN6726A / NZT6726 PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 10 mA, IB = 0 30 V Voltage V Collector-Base Breakdown Voltage I = 1.0 mA, I = 0 40 V (BR)CBO C E V(BR)EBO Emitter-Base Breakdown Voltage I = 100 A, I = 0 5.0 V E C I Collector-Cutoff Current V = 40 V, I = 0 0.1 CBO CB E A I Emitter-Cutoff Current V = 5.0 V, I = 0 0.1 A EBO EB C ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 55 I = 100 mA, V = 1.0 V 60 C CE I = 1.0 A, V = 1.0 V 50 250 C CE Collector-Emitter Saturation Voltage I = 1.0 A, I = 100 mA 0.5 V V C B CE(sat) Base-Emitter On Voltage I = 1.0 A, V = 1.0 V 1.2 V V C CE BE(on) SMALL SIGNAL CHARACTERISTICS Small-Signal Current Gain I = 50 mA, V = 10 V, 2.5 25 h C CE fe f = 20 MHz Collector-Base Capacitance V = 10 V, I = 0, f = 1.0 MHz 30 pF C cb CB E *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% 3 NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation vs Collector Current Voltage vs Collector Current 300 1 V = 5.0V = 10 CE 250 0.8 200 125 C 0.6 25 C 150 25 C 0.4 100 - 40 C - 40 C 125 C 0.2 50 0 0 0.01 0.1 1 3 0.01 0.1 1 2 I - COLLECTOR CURRENT (A) I - COLLECTOR CURRENT (A) C C FE CESAT h - TYPICAL PULSED CURRENT GAIN V - COLLECTOR-EMITTER VOLTAGE (V)