Ordering number : ENA0417 TND312S SANYO Semiconductors DATA SHEET ExPD (Excellent Power Device) General Purpose Driver for PDP Sustain Pulse Drive, Motor Drive, TND312S Switching Power Supply, and DC / DC Converter Applications Features Dual buffer. Monolithic structure (High voltage CMOS process adopted). Withstand voltage of 25V is assured. Wide range of operating voltage : 4.5V to 25V. Peak outpout current : 2A. Fast switching time (25ns typical at 1000pF load). Fully compatible input to TTL / CMOS. (V =not more than 2.6V, at V =4.5 to 25V) IH DD Built-in input pull-down resistance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Supply Voltage V 0 to 25 V DD Input Voltage V GND--0.3 to V +0.3 V IN DD Allowable Power Dissipation P max 0.3 W D Junction Temperature Tj --55 to +150 C Storage Temperature Tstg --55 to +150 C Recommended Operating Conditions at Ta=25C Parameter Symbol Conditions Ratings Unit Operating Supply Voltage V 4.5 to 25 V DD Operating Temperature Topr --40 to +125 C Electrical Characteristics (AC Characteristics) at Ta=25C, V =18V, V =5V DD IN Ratings Parameter Symbol Conditions Unit min typ max Turn-On Rise Time t C =1000pF 20 35 ns r L Turn-Off Fall Time t C =1000pF 25 40 ns f L t1C =1000pF 30 45 ns D L Delay Time t2C =1000pF 45 60 ns D L Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D0606IP TI IM TB-00001540 No. A0417-1/5TND312S Electrical Characteristics (DC Characteristics) at Ta=25C, V =4.5 to 25V DD Ratings Parameter Symbol Conditions Unit min typ max Logic 1 Input Voltage V 2.6 V IH Logic 0 Input Voltage V 0.8 V IL Logic 1 Input Bias Current I+V =V =25V 20 55 A IN IN DD Logic 0 Input Bias Current I -- V =0V or V --1 1 A IN IN DD High Level Output Voltage V I =0A V --0.1 V OH O DD Low Level Output Voltage V I =0A 0.1 V OL O V =10V, V =3V, (both inputs) 1.0 4.5 mA DD IN V Supply Current Isupp DD V =10V, V =0V, (both inputs) 0.2 mA DD IN Output High Short Circuit Pulsed Current I+V =18V, PW10s, V =0V 2.0 A O DD OUT Output Low Short Circuit Pulsed Current I -- V =18V, PW10s, V =18V 2.0 A O DD OUT V =18V, Iload=10mA, V =H 4 6 DD OUT Output On Resistance ROUT V =18V, Iload=10mA, V =L 3 5 DD OUT Package Dimensions unit : mm (typ) 7005-007 8 5 1 : NC 14 2 : IN A 0.43 0.2 3 : GND 4 : IN B 5 : OUT B 5.0 6 : VDD 7 : OUT A 8 : NC 1.27 0.595 SANYO : SOP8 Block Diagram V DD IN OUT GND No. A0417-2/5 0.1 1.5 1.8 MAX 4.4 0.3 6.0