Product Information

TVS5501V10MUT5G

TVS5501V10MUT5G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes 10V TVS IN UDFN2

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8648 ea
Line Total: USD 0.86

7143 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6852 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

TVS5501V10MUT5G
ON Semiconductor

1 : USD 0.6424
10 : USD 0.5095
100 : USD 0.3682
500 : USD 0.3284
1000 : USD 0.2608
8000 : USD 0.2209
24000 : USD 0.2173
48000 : USD 0.2149

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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TVS5501V10 Transient Voltage Suppressors Features Protection for the following IEC Standards: www.onsemi.com IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 60 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 Cathode Anode MAXIMUM RATINGS Rating Symbol Value Unit MARKING IEC 6100042 (ESD) Contact 30 kV DIAGRAM Air 30 Operating Junction and Storage T , T 65 to +150 C J stg UDFN2 EM Temperature Range CASE 517CZ Maximum Peak Pulse Current I 60 A PP 8/20 s T = 25C A E = Specific Device Code M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping TVS5501V10MUT5G UDFN2 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2018 Rev. 3 TVS5501V10/DTVS5501V10 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional TVS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 10 V RWM Breakdown Voltage V I = 1 mA 12 V BR T Reverse Leakage Current I V = 10 V 0.5 A R RWM Clamping Voltage (Note 1) V I = 10 A 15 V C PP Clamping Voltage (Note 1) V I = 60 A 20 V C PP Dynamic Resistance R 100 ns TLP Pulse, I/O Pin to GND 0.05 DYN Junction Capacitance C V = 0 V, f = 1 MHz 400 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 16 0 14 2 12 4 10 6 8 8 6 10 4 12 2 14 0 16 0 5 10 15 20 25 30 30 25 20 15 10 5 0 Ipk (A) Ipk (A) Figure 1. Positive TLP IV Curve Figure 2. Negative TLP IV Curve www.onsemi.com 2 Vpk (V) Vpk (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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