UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount www.onsemi.com Features High Voltage and High Current: V = 50 V, I = 200 mA CEO C (6) (5) (4) High h : h = 200 400 FE FE Moisture Sensitivity Level: 1 ESD Rating Human Body Model: 3A Q Q 1 2 ESD Rating Machine Model: C NSV Prefix for Automotive and Other Applications Requiring (1) (2) (3) Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C) A SC88 Rating Symbol Value Unit CASE 419B CollectorBase Voltage V 60 Vdc (BR)CBO CollectorEmitter Voltage V 50 Vdc (BR)CEO MARKING DIAGRAM EmitterBase Voltage V 7.0 Vdc (BR)EBO Collector Current Continuous I 200 mAdc C THERMAL CHARACTERISTICS 3Z M Characteristic (One Junction Heated) Symbol Max Unit 1 Total Device Dissipation P 187 (Note 1) mW D T = 25C 256 (Note 2) A 3Z = Device Code Derate above 25C 1.5 (Note 1) mW/C M = Date Code 2.0 (Note 2) = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, Junction-to-Ambient R 670 (Note 1) C/W JA 490 (Note 2) Characteristic (Both Junctions Heated) Symbol Max Unit ORDERING INFORMATION Total Device Dissipation P 250 (Note 1) mW D Device Package Shipping T = 25C 385 (Note 2) A Derate above 25C 2.0 (Note 1) mW/C UMZ1NT1G SC88 3000 / 3.0 (Note 2) (PbFree) Tape & Reel Thermal Resistance, Junction-to-Ambient R 493 (Note 1) C/W JA NSVUMZ1NT1G SC88 3000 / 325 (Note 2) (PbFree) Tape & Reel Thermal Resistance, Junction-to-Lead R 188 (Note 1) C/W JL For information on tape and reel specifications, 208 (Note 2) including part orientation and tape sizes, please Junction and Storage Temperature T , T 55 to +150 C refer to our Tape and Reel Packaging Specifications J stg Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR4 Minimum Pad 2. FR4 1.0 x 1.0 inch Pad Semiconductor Components Industries, LLC, 2010 Publication Order Number: September, 2016 Rev. 9 UMZ1NT1/DUMZ1NT1G Q1: NPN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C CollectorBase Cutoff Current I 0.1 Adc CBO (V = 45 Vdc, I = 0) CB E CollectorEmitter Cutoff Current I CEO (V = 10 Vdc, I = 0) 0.1 Adc CE B (V = 30 Vdc, I = 0) 2.0 Adc CE B (V = 30 Vdc, I = 0, T = 80C) 1.0 mAdc CE B A DC Current Gain (Note 3) h FE (V = 6.0 Vdc, I = 2.0 mAdc) 200 400 CE C CollectorEmitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B Transistor Frequency f 114 MHz T 3. Pulse Test: Pulse Width 300 s, D.C. 2%. Q2: PNP ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C CollectorBase Cutoff Current I 0.1 Adc CBO (V = 45 Vdc, I = 0) CB E CollectorEmitter Cutoff Current I CEO (V = 10 Vdc, I = 0) 0.1 Adc CE B (V = 30 Vdc, I = 0) 2.0 Adc CE B (V = 30 Vdc, I = 0, T = 80C) 1.0 mAdc CE B A DC Current Gain (Note 3) h FE (V = 6.0 Vdc, I = 2.0 mAdc) 200 400 CE C CollectorEmitter Saturation Voltage V 0.3 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B Transistor Frequency f 142 MHz T www.onsemi.com 2