VEC2315 Power MOSFET 60V, 137m, 2.5A, Dual P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 137m 10V 4V drive 60V 180m 4.5V 2.5A Low-Profile Package 194m 4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION P-Channel Typical Applications Motor Driver 87 6 5 SPECIFICATIONS 1 : Source1 2:Gate1 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3 : Source2 Parameter Symbol Value Unit 4:Gate2 5:Drain2 Drain to Source Voltage V 60 V DSS 6:Drain2 7:Drain1 Gate to Source Voltage V 20 V GSS 8:Drain1 Drain Current (DC) I 2.5 A D 12 34 Drain Current (Pulse) I 10 DP A PW 10 s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 0.9 D W 2 (900mm 0.8mm) 1unit UM Total Dissipation When mounted on ceramic substrate P 1.0 W T LOT No. 2 (900mm 0.8mm) TL Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C ORDERING INFORMATION Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage See detailed ordering and shipping the device. If any of these limits are exceeded, device functionality should not information on page 5 of this data sheet. be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient R 138.8 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) 1unit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : October 2015 - Rev. 1 VEC2315/D VEC2315 ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I = 1mA, V =0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V = 60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V = 16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V = 10V, I = 1mA 1.2 2.6 V GS DS D Forward Transconductance g V = 10V, I = 1.5A 3.9 S FS DS D R (on)1 I = 1.5A, V = 10V 105 137 m DS D GS Static Drain to Source On-State 128 180 R (on)2 I = 0.75A, V = 4.5V m DS D GS Resistance R (on)3 I = 0.75A, V = 4V 138 194 m DS D GS Input Capacitance Ciss 420 pF Output Capacitance Coss 54 pF V = 20V, f=1MHz DS Reverse Transfer Capacitance Crss 44 pF Turn-ON Delay Time t (on) 6.4 ns d Rise Time t 9.8 ns r See specified Test Circuit Turn-OFF Delay Time 65 ns t (off) d Fall Time 36 ns t f Total Gate Charge Qg 11 nC Gate to Source Charge Qgs 1.4 nC V = 30V, V = 10V, I = 2.5A DS GS D Gate to Drain Miller Charge Qgd 2 nC Forward Diode Voltage V SD I = 2.5A, V=0V 0.83 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --30V DD IN 0V --10V I =--1.5A D V IN R =20 L D V OUT PW=10s D.C.1% G VEC2315 P.G 50 S www.onsemi.com 2