X-On Electronics has gained recognition as a prominent supplier of BP 104 S-Z Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP 104 S-Z Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP 104 S-Z OSRAM

BP 104 S-Z electronic component of OSRAM
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See Product Specifications
Part No.BP 104 S-Z
Manufacturer: OSRAM
Category: Photodiodes
Description: OSRAM Opto Semiconductors Photodiodes PHOTODIODE, SMT
Datasheet: BP 104 S-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 1500
3000 : USD 0.3476
30000 : USD 0.3393
300000 : USD 0.2893
1500000 : USD 0.2611
3000000 : USD 0.2608
N/A

Obsolete
0
MOQ : 100
Multiples : 1
100 : USD 0.9015
150 : USD 0.8518
200 : USD 0.8354
250 : USD 0.8165
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.5667
10 : USD 0.6702
100 : USD 0.3103
1000 : USD 0.2596
1500 : USD 0.2596
9000 : USD 0.2596
24000 : USD 0.2586
49500 : USD 0.2527
99000 : USD 0.2437
N/A

Obsolete
   
Manufacturer
Product Category
Product
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Package Case
Packaging
Brand
If Forward Current
Noise Equivalent Power Nep
Pd Power Dissipation
Photocurrent
Responsivity
Factory Pack Quantity :
Vr Reverse Voltage
Rohs Mouser
Height
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Noise Equivalent Power - Nep
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BP 104 S-Z from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP 104 S-Z and other electronic components in the Photodiodes category and beyond.

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2012-10-15 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 BP 104 S, BP 104 SR BP 104 S BP 104 SR Features: Besondere Merkmale: Suitable for reflow soldering Geeignet fr Reflow Lten Especially suitable for applications from 400 nm to Besonders geeignet fr Anwendungen im Bereich 1100 nm von 400 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit Suitable for SMT SMT-fhig Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln IR remote control of hi-fi and TV sets, video tape IR-Fernsteuerung von Fernseh- und recorders, dimmers, remote controls of various Rundfunkgerten, Videorecordern, Lichtdimmern, equipment Gertefernsteuerungen Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer E = 1000 lx, Std. Light A, V = 5 V v R I A P BP 104 S 55 ( 40) Q65110A2626 BP 104 SR 55 ( 40) Q65110A4262 2012-10-15 1Version 1.0 BP 104 S, BP 104 SR Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 55 ( 40) A P Fotostrom (E = 1000 lx, Std. Light A, V = 5 V) v R Wavelength of max. sensitivity 850 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 400 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.62 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 850 nm) Quantum yield of the chip 0.90 Electro Quantenausbeute des Chips ns ( = 850 nm) /Photon 2012-10-15 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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