This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 4.00.2 2.00.2 Complementary to 2SC3311A 0.75 max. Features High forward current transfer ratio h FE Allowing supply with the radial taping Optimum for high-density mounting Absolute Maximum Ratings T = 25C a +0.20 0.45 0.10 Parameter Symbol Rating Unit +0.20 0.45 (2.5) (2.5) 0.10 Collector-base voltage (Emitter open) V 60 V CBO 0.70.1 Collector-emitter voltage (Base open) V 50 V CEO 1: Emitter Emitter-base voltage (Collector open) V 7V 2: Collector EBO 1 23 3: Base Collector current I 100 mA C NS-B1 Package Peak collector current I 200 mA CP Collector power dissipation P 300 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 60 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 100 nA CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 1 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE CE C Collector-emitter saturation voltage V I = 50 mA, I = 5 mA 0.3 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 3.5 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S No rank h 160 to 260 210 to 340 290 to 460 160 to 460 FE Publication date: March 2003 SJC00016BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1309A P T I V I V C a C CE C BE 500 120 240 T = 25C V = 5 V a CE 100 200 400 80 160 25C 300 I = 300 A B T = 75C 25C a 60 120 250 A 200 A 200 40 80 150 A 100 A 100 20 40 50 A 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 10 600 160 I / I = 10 C B V = 5 V V = 10 V CE CB T = 25C a 140 500 1 120 400 T = 75C 100 a T = 75C a 25C 0.1 300 80 25C 25C 25C 60 200 0.01 40 100 20 0.001 0 0 1 10 100 1 000 1 10 100 1 000 0.1 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E C V ob CB 10 I = 0 E f = 1 MHz T = 25C a 8 6 4 2 0 1 10 100 ( ) Collector-base voltage V V CB 2 SJC00016BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.