X-On Electronics has gained recognition as a prominent supplier of 2SA216400L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA216400L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA216400L Panasonic

2SA216400L electronic component of Panasonic
2SA216400L Panasonic
2SA216400L Bipolar Transistors - BJT
2SA216400L  Semiconductors

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Part No. 2SA216400L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 20V 0.03A SSSMINI3P
Datasheet: 2SA216400L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.3071
10 : USD 0.2511
100 : USD 0.2136
500 : USD 0.2095
N/A

   
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RoHS - XON
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We are delighted to provide the 2SA216400L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA216400L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplication Unit: mm +0.05 +0.05 0.33 0.10 0.02 0.02 Features 3 High transfer ratio f T SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. +0.05 1 2 0.23 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings T = 25C a 1.20 0.05 Parameter Symbol Rating Unit 5 Collector-base voltage (Emitter open) V 30 V CBO Collector-emitter voltage (Base open) V 20 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 30 mA C 1: Base 2: Emitter Collector power dissipation P 100 mW C 3: Collector SSSMini3-F1 Package Junction temperature T 125 C j Marking Symbol : E Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage V V = 10 V, I = 1 mA 0.7 V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cut-off current (Base open) I V = 20 V, I = 0 100 A CEO CE B Emitter-base cut-off current (Collector open) I V = 5 V, I = 0 10 A EBO EB C Forward current transfer ratio h V = 10 V, I = 1 mA 70 220 FE CB E Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.1 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 150 300 MHz T CB E Noise gure NF V = 10 V, I = 1 mA, f = 5 MHz 2.8 dB CB E Reverse transfer impedance Z V = 10 V, I = 1 mA, f = 2 MHz 22 rb CB E Common-emitter reverse transfer capacitance C V = 10 V, I = 1 mA, f = 10.7 MHz 1.2 pF re CB E Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00330AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2164 2SA2164 P -T 2SA2164 I -V 2SA2164 I -V C a C CE C BE P T I V I V C a C CE C BE 30 120 25 I = 300 A T = 25C B a V = 10 V CE 250 A 100 25 20 T = 85C a 200 A 80 20 25C 15 150 A 60 15 25C 100 A 10 40 10 50 A 5 20 5 0 0 0 0 80 20 40 60 100 120 140 0 2 4 6 8 10 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Ambient temperature T ( C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE 2SA2164 V -I 2SA2164 h -I 2SA2164 C -V CE(sat) C FE C ob CB V I h I C V CE(sat) C FE C ob CB 160 10 10 f = 1 MHz I / I = 10 C B V = 10 V CE T = 25C a 140 T = 85C a 120 25C 1 100 25C 1 80 T = 85C a 25C 60 0.1 40 25C 20 0.01 0 0.1 0.1 1 10 100 0.1 1 10 100 0 5 10 15 20 25 3 0 ( ) Collector current I (mA) Collector current I (mA) Collector-base voltage V V C C CB 2 SJC00330AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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