X-On Electronics has gained recognition as a prominent supplier of 2SB06210RA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB06210RA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB06210RA Panasonic

2SB06210RA electronic component of Panasonic
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Part No.2SB06210RA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 25V 1A TO-92
Datasheet: 2SB06210RA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

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0
MOQ : 1
Multiples : 1
1 : USD 0.3624
10 : USD 0.2778
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RoHS - XON
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We are delighted to provide the 2SB06210RA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB06210RA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0621 Silicon PNP epitaxial planar type For low-frequency driver amplication Complementary to SD0592 Package Features Low collector-emitter saturation voltage V Code CE(sat) High transition frequency f TO-92B-B1 T Pin Name Absolute Maximum Ratings T = 25C 1. Emitter a 2. Collector Parameter Symbol Rating Unit 3. Base Collector-base voltage (Emitter open) V 30 V CBO Collector-emitter voltage (Base open) V 25 V CEO Emitter-base voltage (Collector open) V 5 V EBO Collector current I 1 A C Peak collector current I 1.5 A CP Collector power dissipation P 750 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 mA, I = 0 5 V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 mA CBO CB E * h V = 10 V, I = 500 mA 85 340 FE1 CE C Forward current transfer ratio h V = 5 V, I = 1 A 50 FE2 CE C Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 20 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classication * Rank Q R S h 85 to 170 120 to 240 170 to 340 FE1 Publication date : October 2008 SJC00044DED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0621 P T I V I I C a C CE C B 1.0 1.50 1.2 T = 25C a V = 10 V CE T = 25C a 1.25 I = 10 mA 1.0 B 0.8 9 mA 8 mA 1.00 0.8 7 mA 0.6 6 mA 0.75 5 mA 0.6 4 mA 0.4 0.50 3 mA 0.4 2 mA 0.2 0.25 0.2 1 mA 0 0 0 0 40 80 120 160 0 2 4 6 8 10 0 2 4 6 8 10 12 ( ) Collector-emitter voltage V (V) ( ) Ambient temperature T C Base current I mA CE a B V I V I h I CE(sat) C BE(sat) C FE C 100 100 500 I / I = 10 I / I = 10 C B C B V = 10 V CE 400 10 10 300 25C T = 25C T = 75C a a 1 1 75C 200 25C T = 75C a 25C 25C 0.1 25C 0.1 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 ( ) ( ) Collector current I (A) Collector current I A Collector current I A C C C f I C V V R T E ob CB CER BE 50 200 120 V = 10 V CB I = 0 E I = 10 mA T = 25C C a f = 1 MHz T = 25C a T = 25C a 100 40 160 80 30 120 60 20 80 40 40 10 20 0 0 0 1 10 100 1 10 100 0.1 1 10 100 ( ) ( ) Collector-base voltage V V ( ) Emitter current I mA Base-emitter resistance R k CB E BE 2 SJC00044DED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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