This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0789, 2SB0789A (2SB789, 2SB789A) Silicon PNP epitaxial planar type Unit: mm For low-frequency driver amplification 4.50.1 1.60.2 1.50.1 Features High collector-emitter voltage (Base open) V CEO Large collector power dissipation P C 3 12 0.40.04 0.40.08 0.50.08 1.50.1 Absolute Maximum Ratings T = 25C a 3 Parameter Symbol Rating Unit 2SB0789 V 100 V 45 Collector-base voltage CBO 3.00.15 (Emitter open) 2SB0789A 120 2SB0789 V 100 V Collector-emitter voltage CEO 1: Base (Base open) 2SB0789A 120 2: Collector 3: Emitter Emitter-base voltage (Collector open) V 5V EBO MiniP3-F1 Package Collector current I 0.5 A C Marking Symbol: Peak collector current I 1A CP 2SB0789: D * Collector power dissipation P 1W C 2SB0789A: E Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Print circuit board: Copper foil area of 1 cm or more, and the board * thickness of 1.7 mm for the collector portion. Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit 2SB0789 V I = 100 A, I = 0 100 V Collector-emitter voltage CEO C B (Base open) 2SB0789A 120 Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C 1 2 * * Forward current transfer ratio h V = 10 V, I = 150 mA 90 220 FE1 CE C h V = 5 V, I = 500 mA 50 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.2 0.6 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 0.85 1.20 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classification * Rank Q R h 90 to 155 130 to 220 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2002 SJC00056CED 1 Maintenance/ Discontinued Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0789, 2SB0789A P T I V I I C a C CE C B 1.4 1.2 1.2 T = 25C a Copper plate at the collector V = 10 V CE 2 is more than 1 cm in area, T = 25C a I = 20 mA B 1.2 1.7 mm in thickness 18 mA 1.0 1.0 16 mA 14 mA 12 mA 1.0 10 mA 0.8 0.8 mA 0.8 0.6 mA 0.8 0.4 mA 0.6 0.6 0.6 0.4 0.2 mA 0.4 0.4 0.2 0.2 0.2 0 0 0 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 0 5 10 15 ( ) Ambient temperature T (C) Collector-emitter voltage V V Base current I (mA) a CE B V I V I h I CE(sat) C BE(sat) C FE C 100 100 600 I / I = 10 I / I = 10 C B C B V = 10 V CE 500 10 10 400 25C T = 25C a 1 1 300 T = 75C a 25C 75C T = 75C 25C a 200 25C 0.1 0.1 25C 100 0.01 0.01 0 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C f I C V T E ob CB 200 50 V = 10 V CB I = 0 E T = 25C a f = 1 MHz 180 T = 25C a 40 160 140 120 30 100 80 20 60 10 40 20 0 0 1 10 100 1 10 100 ( ) Emitter current I (mA) Collector-base voltage V V E CB 2 SJC00056CED Maintenance/ Discontinued Please visit following URL about latest information.