X-On Electronics has gained recognition as a prominent supplier of 2SB0709ASL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB0709ASL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB0709ASL Panasonic

2SB0709ASL electronic component of Panasonic
2SB0709ASL Panasonic
2SB0709ASL Bipolar Transistors - BJT
2SB0709ASL  Semiconductors

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Part No. 2SB0709ASL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 45V 0.1A MINI 3P
Datasheet: 2SB0709ASL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0289
N/A

0
MOQ : 1
Multiples : 1
1 : USD 0.1474
10 : USD 0.096
N/A

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB0709ASL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB0709ASL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SD0601A (2SD601A) +0.10 0.40 0.05 +0.10 0.16 0.06 3 Features High forward current transfer ratio h FE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing. 1.90.1 +0.20 2.90 0.05 Absolute Maximum Ratings T = 25C a 10 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 45 V CBO 1: Base Collector-emitter voltage (Base open) V 45 V CEO 2: Emitter Emitter-base voltage (Collector open) V 7V 3: Collector EBO EIAJ: SC-59 Collector current I 100 mA C Mini3-G1 Package Peak collector current I 200 mA CP Marking Symbol: B Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 45 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 45 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 7V EBO E C Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 160 460 FE CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.3 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 2.7 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S No-rank h 160 to 260 210 to 340 290 to 460 160 to 460 FE Marking symbol BQ BR BS B Product of no-rank is not classified and have no marking symbol for rank. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJD00047BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0709A P T I V I I C a C CE C B 240 120 60 T = 25C a V = 5 V CE T = 25C a 200 100 50 160 80 40 I = 300 A B 60 120 30 250 A 200 A 40 80 20 150 A 100 A 20 40 10 50 A 0 0 0 0 2 4 6 8 10 12 0 40 80 120 160 0 100 200 300 400 Collector-emitter voltage V (V) Ambient temperature T (C) Base current I (A) CE a B I V I V V I B BE C BE CE(sat) C 400 240 10 I / I = 10 C B V = 5 V V = 5 V CE CE T = 25C a 350 25C 200 T = 75C a 25C 1 300 160 250 T = 75C a 25C 200 120 0.1 25C 150 80 0.01 100 40 50 0 0.001 0 1 10 100 1000 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 Base-emitter voltage V (V) Collector current I (mA) Base-emitter voltage V (V) BE C BE h I f I C V FE C T E ob CB 160 8 600 V = 10 V I = 0 V = 10 V CB E CE T = 25C f = 1 MHz a 7 140 T = 25C a 500 6 120 400 5 100 T = 75C a 80 4 300 25C 3 25C 60 200 2 40 100 20 1 0 0 0 0.1 1 10 100 1 10 100 1 10 100 1 000 ( ) Emitter current I (mA) Collector-base voltage V V Collector current I (mA) E CB C 2 SJC00047BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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