X-On Electronics has gained recognition as a prominent supplier of 2SB07740RA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB07740RA Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB07740RA Panasonic

2SB07740RA electronic component of Panasonic
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See Product Specifications
Part No.2SB07740RA
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 25V 0.1A TO-92
Datasheet: 2SB07740RA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1741 ea
Line Total: USD 522.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1741

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7002
10 : USD 0.4466
100 : USD 0.3204
500 : USD 0.2688
1000 : USD 0.2525

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SB07740RA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB07740RA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 5.00.2 4.00.2 Features High emitter-base voltage (Collector open) V EBO Protective diodes and resistances between emitter and base can be omitted. 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.15 +0.15 0.45 0.45 0.1 0.1 Collector-base voltage (Emitter open) V 30 V CBO +0.6 +0.6 2.5 2.5 0.2 0.2 Collector-emitter voltage (Base open) V 25 V CEO 1: Emitter 123 Emitter-base voltage (Collector open) V 15 V EBO 2: Collector Collector current I 100 mA C 3: Base EIAJ: SC-43A Peak collector current I 200 mA CP TO-92-B1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 15 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE1 CE C h V = 2 V, I = 100 mA 90 FE2 CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common-emitter reverse transfer) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 210 to 340 290 to 460 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00053BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0774 P T I V I V C a C CE C BE 500 200 240 T = 25C a V = 10 V I = 1.8 mA CE B 1.6 mA 200 1.4 mA 400 160 1.2 mA 160 1.0 mA 300 120 0.8 mA 25C 0.6 mA 120 T = 75C 25C a 200 80 0.4 mA 80 0.2 mA 100 40 40 0 0 0 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature T (C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE V I h I f I CE(sat) C FE C T E 600 100 1000 I / I = 10 C B V = 10 V V = 10 V CE CB T = 25C a 500 10 400 T = 75C a 25C 300 1 100 25C 200 T = 75C a 0.1 25C 100 25C 0 10 0.01 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Emitter current I (mA) Collector current I (mA) C E C C V ob CB 12 I = 0 E f = 1 MHz T = 25C a 10 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00053BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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