X-On Electronics has gained recognition as a prominent supplier of 2SB0710ARL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SB0710ARL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SB0710ARL Panasonic

2SB0710ARL electronic component of Panasonic
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Part No.2SB0710ARL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 50V 0.5A MINI 3P
Datasheet: 2SB0710ARL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 0.1612
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We are delighted to provide the 2SB0710ARL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SB0710ARL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0710A Silicon PNP epitaxial planar type For general amplication Complementary to 2SD0602A Features Package Large collector current I Code C Mini type package, allowing downsizing of the equipment and automatic Mini3-G1 insertion through the tape packing Pin Name 1: Base Absolute Maximum Ratings T = 25C 2: Emitter a 3: Collector Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V -60 V CBO Marking Symbol: D Collector-emitter voltage (Base open) V -50 V CEO Emitter-base voltage (Collector open) V V -5 EBO Collector current I - 0.5 A C Peak collector current I -1 A CP Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T -55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = -10 mA, I = 0 -60 V CBO C E Collector-emitter voltage (Base open) V I = -10 mA, I = 0 -50 V CEO C B Emitter-base voltage (Collector open) V I = -10 mA, I = 0 -5 V EBO E C Collector-base cutoff current (Emitter open) I V = -20 V, I = 0 - 0.1 mA CBO CB E 2 * h V = -10 V, I = -150 mA 85 340 FE1 CE C 1 * Forward current transfer ratio h V = -10 V, I = -500 mA 40 FE2 CE C 1 * Collector-emitter saturation voltage V I = -300 mA, I = -30 mA - 0.35 - 0.60 V CE(sat) C B 1 * Base-emitter saturation voltage V I = -300 mA, I = -30 mA V -1.1 -1.5 BE(sat) C B Transition frequency f V = -10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = -10 V, I = 0, f = 1 MHz 6 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement * 2: Rank classication * Rank Q R S No-rank h 85 to 170 120 to 240 170 to 340 85 to 340 FE1 Marking symbol DQ DR DS D Product of no-rank is not classied and have no indication for rank. Publication date: October 2008 SJC00413AED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0710A 2SB0710A P -T 2SB0710A I -I 2SB0710A I -V C a C B C CE P T I V I I C a C CE C B 240 800 V = 10 V CE T = 25C a T = 25C a 800 I = 10 mA B 9 mA 600 8 mA 160 600 7 mA 6 mA 5 mA 400 4 mA 400 3 mA 80 2 mA 200 200 1 mA 0 0 0 0 40 80 120 160 0 4 8 0 4 8 12 Ambient temperature T (C) Collector-emitter voltage V (V) Base current I (mA) a CE B 2SB0710A V -I 2SB0710A h -I 2SB0710A V -I CE(sat) C FE C BE(sat) C V I V I h I CE(sat) C BE(sat) C FE C 10 400 10 I / I = 10 I / I = 10 C B C B V = 10 V CE 300 T = 25C a 1 1 T = 75C a 75C 200 25C 25C 25C T = 75C a 1 1 10 10 25C 100 25C 2 2 10 0 10 2 3 2 3 2 3 1 10 10 10 10 10 10 1 10 10 10 Collector current I (mA) Collector current I (mA) C Collector current I (mA) C C 2SB0710A f -I 2SB0710A C -V 2SB0710A V -R T E ob CB CER BE f I C V V R T E ob CB CER BE 240 24 120 V = 10 V I = 2 mA CE C T = 25C I = 0 T = 25C a E a f = 1 MHz T = 25C a 160 16 80 80 8 40 0 0 0 2 2 2 3 1 10 10 1 10 10 1 10 10 10 Emitter current I (mA) Collector-base voltage V (V) Base-emitter resistance R (k) E CB BE 2 SJC00413AED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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