X-On Electronics has gained recognition as a prominent supplier of DB3X316J0L Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. DB3X316J0L Schottky Diodes & Rectifiers are a product manufactured by Panasonic. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

DB3X316J0L Panasonic

DB3X316J0L electronic component of Panasonic
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See Product Specifications
Part No.DB3X316J0L
Manufacturer: Panasonic
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SCHOTTKY BARRIER GL WNG 2.9x2.8mm
Datasheet: DB3X316J0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.045
9000 : USD 0.045
15000 : USD 0.045
30000 : USD 0.045
60000 : USD 0.045
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.0608
9000 : USD 0.0515
24000 : USD 0.0494
45000 : USD 0.0442
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Recovery Time
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DB3X316J0L from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DB3X316J0L and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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DB3X316J Silicon epitaxial planar type For small current rectication Unit: mm Features Short reverse recovery time t rr Low forward voltage V F Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 5G Basic Part Number Dual DB2S316 (Common anode) Packaging DB3X316J0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a 1: Cathode-1 3: Anode-1 Parameter Symbol Rating Unit 2: Cathode-2 Anode-2 Reverse voltage V 30 V R Panasonic Mini3-G3-B Repetitive peak reverse voltage V 30 V RRM JEITA SC-59A Single 100 Code TO-236AA/SOT-23 Forward current (Average) I mA F(AV) 1 * Double 70 3 Single 300 Peak forward current I mA FM 1 * Double 200 2 * Non-repetitive peak reverse surge voltage I 1 A FSM Junction temperature T 125 C j 1 2 Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +125 C stg Note) 1: Value of each diode in double diodes used. * 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current) * Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Forward voltage V I = 100 mA 0.55 V F F Reverse current I V = 30 V 15 mA R R Terminal capacitance C V = 10 V, f = 1 MHz 2 pF t R 1 * Reverse recovery time t I = I =100 mA, I = 0.1 I , R = 100 0.8 ns rr F R rr R L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 1: t measurement circuit * rr Input Pulse Output Pulse Bias Application Unit (N-50BU) t t r p t 10% t rr I F t A 90% V R I = 0.1 I rr R t = 2 s I = 100 mA p F t = 0.35 ns I = 100 mA r R Pulse Generator Wave Form Analyzer = 0.05 R = 100 (PG-10N) (SAS-8130) L R = 50 R = 50 s i Publication date: May 2013 Ver. DED 1DB3X316J DB3X316J I -V DB3X316J I -V DB3X316J Ct-VR F F R R I V I V C V F F R R t R 2 1 10 10 Pulse test T = 125C T = 25C a a 3 10 1 10 100C T = 125C 8 a 85C 4 10 2 10 6 5 10 25C 100C 6 3 10 10 85C 4 7 10 25C 4 10 40C 2 8 10 40C 5 9 10 10 0 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 0 10 20 30 Reverse voltage V (V) Forward voltage V (V) Reverse voltage V (V) R F R Ver. DED 2 Forward current I (A) F Reverse current I (A) R Terminal capacitance C (pF) t

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
PA4
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PB4
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