X-On Electronics has gained recognition as a prominent supplier of BC807-40_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807-40_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807-40_R1_00001 Panjit

BC807-40_R1_00001 electronic component of Panjit
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Part No.BC807-40_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /7C/TR/7"/HF/3K/SOT-23/TRA/SOT/GPT-03TP/GPT03-QI39/PJ///
Datasheet: BC807-40_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1023 ea
Line Total: USD 0.1 
Availability - 6850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6850
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1023
10 : USD 0.0682
100 : USD 0.0418
1000 : USD 0.0341
3000 : USD 0.0209
9000 : USD 0.0187
24000 : USD 0.0187
45000 : USD 0.0176

5252
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.182
10 : USD 0.1274
100 : USD 0.0644
500 : USD 0.042
599 : USD 0.028

   
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We are delighted to provide the BC807-40_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807-40_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807 16~BC80740 PNP GENERAL PURPOSE TRANSISTORS 45 Volt POWER 330 mWatt VOLTAGE FEATURES 0.120(3.04) General purpose amplifier applications 0.110(2.80) PNP epitaxial silicon, planar design Collector current I = 500mA C Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) 0.056(1.40) Green molding compound as per IEC61249 Std 0.047(1.20) (Halogen Free) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.003(0.08) 0.070(1.80) Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Apporx. Weight: 0.0003 ounce, 0.0084 gram 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) Device Marking : BC807-16 : 7A 0.020(0.50) BC807-25 : 7B 0.013(0.35) BC807-40 : 7C MECHANICAL DATA PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V -45 V CEO Collector-Base Voltage V -50 V CBO Emitter-Base Voltage V -5 V EBO Collector Current - Continuous I -500 mA C Peak Collector Current I -1000 mA CM Total Power Dissipation (Note 1) P 330 mW TOT o Junction and Storage Temperature Range T , T -55 to 150 C J STG THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT o Thermal Resistance Junction to Ambient (Note 1) R 375 C/W JA o Thermal Resistance Junction to Lead R 220 C/W JL NOTES : 1. Transistor mounted on FR-5 board mini mum pad mounting conditions. February 24,2017-REV.05 PAGE . 1 0.006(0.15)MIN.BC80 716~BC80740 o ELECTRICAL CHARACTERISTICS(TJ=25 C,unless otherwise notes) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage (I =-10mA, I =0) V CEO -45 - - V C B (BR) Collector-Base Breakdown Voltage (V =0V, I =-10A) V CBO -50 - - V EB C (BR) Emitter-Base Breakdown Voltage (I =-1A,Ic=0) V EBO -5.0 - - V E (BR) Emitter-Base Cutoff Current (V =-5V) I - - -100 nA EB EBO O Collector-Base Cutoff Current (V =-20V,I =0) T =25 C -100 nA CB E J - I - CBO - O A -5.0 T =150 C J DC Current Gain BC807-16 100 - 250 (Ic=-100mA,V =-1V) BC807-25 160 - 400 CE BC807-40 250 - 600 h - FE (Ic=-500mA,V =-1V) 40 - - CE Collector-Emitter Saturation Voltage (Ic=-500mA ,I =-50mA) V -- -0.7 V B CE(SAT) Base-Emitte Voltage (Ic=-500mA,V =-1.0V) V -- -1.2 V CE BE(ON) Collector-Base Capacitance (V =-10v,I =0,f=1MHz) C -7.0 - pF CB E CBO Current Gain-Bandwidth Product (Ic=-10mA,V =-5V,f=100MHz) f 100 - - MHz CE T ELECTRICAL CHARACTERISTICS 1000 1000 O TC= 150 J O TC= 150 J O TC=25 J 100 O 100 TC=25 O J TC= 100 J O TC= 100 J V =1V V =1V CE CE 10 10 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Collector Current,I()mA Collector Current,I()mA C C Fig.1. BC807-16 Typical h vs. I Fig.2. BC807-25 Typical h vs. I FE C FE C 1000 o 100 TC=150 J C()EB IB o TC=25 J o TC=100 100 J 10 C ()EB OB V =1V CE 10 1 0.01 0.1 1 10 100 1000 0.1 1 10 100 CollectorCurrent,I()mA C Reverse Voltage, V ()V R Fig. 3 BC807-40 Typical h vs. I Fig.4 Typical Capacitances FE C February 24,2017-REV.05 PAGE . 2 hFE hFE hFE Capacitance,(C p F) J

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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