MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR U n i t i n c h ( m m ) 225 mWatt 40 Volt POWER S O T - 2 3 VOLTAGE FEATURES NPN epitaxial silicon, planar design 0 . 1 2 0 ( 3 . 0 4 ) Collector-emitter voltage VCE = 40V 0 . 11 0 ( 2 . 8 0 ) Collector current IC = 200mA Transition frequency fT>300MHz IC=10mAdc, VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0 . 0 5 6 ( 1 . 4 0 ) Green molding compound as per IEC 61249 standard 0 . 0 4 7 ( 1 . 2 0 ) MECHANICAL DATA 0 . 0 0 8 ( 0 . 2 0 ) 0 . 0 7 9 ( 2 . 0 0 ) 0 . 0 7 0 ( 1 . 8 0 ) 0 . 0 0 3 ( 0 . 0 8 ) Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams 0 . 0 0 4 ( 0 . 1 0 ) 0 . 0 4 4 ( 1 . 1 0 ) 0 . 0 0 0 ( 0 . 0 0 ) 0 . 0 3 5 ( 0 . 9 0 ) Marking: S1A Top View 3 Collector 0 . 0 2 0 ( 0 . 5 0 ) 3 Collector 0 . 0 1 3 ( 0 . 3 5 ) 1 Base 1 2 2 Base Emitter Emitter ABSOLUTE RATINGS PlARAMETER Seymbo Vsalu Unit CVollector - Emitter Voltage CEO 4V0 CVollector - Base Voltage CBO 6V0 EVmitter - Base Voltage EBO 6V.0 CIollector Current - Continuous C 2A00 m THERMAL CHARACTERISTICS PlARAMETER Seymbo Vsalu Unit MPax Power Dissipation (Note 1) TOT 2W25 m O TRhermal Resistance , Junction to Ambient JA 556 C/W O JTunction Temperature J -55 to 150 C O STtorage Temperature STG -55 to 150 C Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. September 14,2017-REV.03 PAGE . 1MMBT3904 ELECTRICAL CHARACTERISTICS PlA RA ME TE R SnymboT.est C ondi ti o M.INT.YPMsA X Uni t CVollector - E mi tter B reakdown Voltage (BR)CIE OC=B1.0mA ,I=00 4- - V CVollector - B ase B reakdown Voltage (BR)CIB OC=E10uA ,I=00 6- - V EVmi tter - B ase B reakdown Voltage (BR)EIB OE=C10uA ,I=00 6-. - V BIase C utoff C urrent BL VECV=B30V,EV=-3.0 - 5A0 n CIollector C utoff C urrent CEX VECV=B30V,EV=-3.0 - 5A0 n IC=E0.1mA , VCV=1.0 40 - - IC=E1.0mA , VCV=1.0 70 - - DhC C urrent Gai n (Note 2) IC=E10mA , VCV=1.0 100 - 300 - FE IC=E50mA , VCV=1.0 60 - - IC=E100mA , VCV=1.0 30 - - C ollector - E mi tter S aturati on Voltage IC=B10mA , I =1.0mA 0.2 VCE(SAT) -- V (Note 2) IC=B50mA , I =5.0mA 0.3 IC=B10mA , I =1.0mA 0.65 - 0.85 BVase - E mi tter S aturati on Voltage (Note 2) BE(SAT) V IC=B50mA , I =5.0mA - - 0.95 CCollector - B ase C apaci tance CBO VBCI=E5V,=-0, f=1MHz - 4F.0 p VBEI=C0.5V, =0, ECmi tter - B ase C apaci tance EBO -- 8F.0 p f=1MHz VCC=3V,VBE=0.5V, Ddelay Ti me t -- 3s5 n IC=10mA ,IB=1.0mA VCC=3V,VBE=0.5V, Rri se Ti me t -- 3s5 n IC=10mA ,IB=1.0mA VCCI=C3V, =10mA Sstorage Ti me t -- 2s00 n IB1B=I 2=1.0mA VCCI=C3V, =10mA Ffall Ti me t -- 5s0 n IB1B=I 2=1.0mA Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS Storage and Fall Time Equivalent Test Circuit September 14,2017-REV.03 PAGE . 2