X-On Electronics has gained recognition as a prominent supplier of MMBT3906_R1_000Z8 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906_R1_000Z8 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3906_R1_000Z8 Panjit

Name: MMBT3906_R1_000Z8
Brand: Panjit
SKU: MMBT3906R1000Z8_Panjit
Availability: OutOfStock
Rating: 5 (11 reviews)

MMBT3906_R1_000Z8 electronic component of Panjit

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See Product Specifications

Part No.	MMBT3906_R1_000Z8
Manufacturer:	Panjit
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 200mA 40V SOT-23 (SOT-23-3) RoHS
Datasheet:	MMBT3906_R1_000Z8 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.02 ea
Line Total: USD 1

Availability - 0

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT3906_R1_000Z8 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 05 Dec to Tue. 10 Dec MOQ : 50 Multiples : 50	50 : USD 0.02 500 : USD 0.0161 3000 : USD 0.0125 6000 : USD 0.0112 24000 : USD 0.0101 51000 : USD 0.0096

Specifications

Manufacturer Panjit Panjit
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)
Brand Category Panjit Panjit
Transistor Type pnp pnp
Current - Collector Ic Max 200 mA 200 mA
Voltage - Collector Emitter Breakdown Max 40 V 40 V
Power - Max 350 mW 350 mW
Collector Cut-Off Current Icbo - -
Collector-Emitter Breakdown Voltage Vceo 40 V 40 V
Power Dissipation Pd 330 mW 330 mW
Collector Current Ic 200 mA 200 mA
Dc Current Gain Hfe@Ic Vce 100@10 mA , 1V 100@10 mA , 1V
Transition Frequency Ft 250MHz 250MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 400 mV @50 mA , 5 mA 400 mV @50 mA , 5 mA
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

We are delighted to provide the MMBT3906_R1_000Z8 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906_R1_000Z8 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The MMBT3906_R1_000Z8 is a PNP transistor manufactured by Panjit that is designed for a wide variety of electronic applications. It is housed in a SOT-23-3 package and is compliant with European Restriction of Hazardous Substances (RoHS) regulations. This PNP transistor has a continuous collector current rating of 200mA and a Collector-Emitter voltage of 40V, making it suitable for a wide range of applications. It also has excellent electrical characteristics, making it ideal for use in amplifiers, switching, and other electronic circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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