BC817-40_R1_00001 Panjit

BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER VOLTAGE 45 Volt 330 mW FEATURES General purpose amplifier applications 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current I = 500mA C Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DATA 0.008(0.20) 0.079(2.00) Case: SOT-23, Plastic 0.070(1.80) 0.003(0.08) Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounce, 0.0084 gram Device Marking: BC817-16 : 8A 0.004(0.10) 0.044(1.10) 0.000(0.00) 0.035(0.90) BC817-25 : 8B BC817-40 : 8C 0.020(0.50) 0.013(0.35) MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 50 V CBO Emitter-Base Voltage V 5V EBO Collector Current - Continuous I 500 mA C Peak Collector Current I 1000 mA CM Total Power Dissipation ( NOTE ) P 330 mW TOT o Junction and Storage Temperature Range T , T -55 to +150 C J STG THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT o Thermal Resistance Junction to Ambient ( NOTE ) R 375 C / W JA o Thermal Resistance Junction to Lead R 220 C / W JL NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions. January 30,2015-REV.04 PAGE . 1 0.006(0.15)MIN.BC817 SERIES o ELECTRICAL CHARACTERISTICS ( TJ=25 C,unless otherwise notes ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V CEO 45 - - V (BR) Collector-Base Breakdown Voltage ( V =0V, Ic=10A ) V CBO 50 - - V EB (BR) Emitter-Base Breakdown Voltage ( I =1A, Ic=0 ) V EBO 5 - - V E (BR) Emitter-Base Cutoff Current ( V =5V ) I -- 100 nA EB EBO o Collector-Base Cutoff Current ( V =20V, I =0 ) T =25 C - - 100 nA CB E J I CBO o - - 5 A T =150 C J DC Current Gain ( Ic=100mA, V =1V ) BC817-16 100 - 250 CE BC817-25 160 - 400 h - FE BC817-40 250 - 600 DC Current Gain ( Ic=500mA, V =1V ) 40 - - CE Collector-Emitter Saturation Voltage ( Ic=500mA, I =50mA ) V -- 0.7 V B CE(SAT) Base-Emitte Voltage ( Ic=500mA, V =1V ) V -- 1.2 V CE BE(ON) Collector-Base Capacitance (V =10V, I =0, f=1MHz) C -7 - pF CB E CBO Current Gain-Bandwidth Product ( Ic=10mA, V =5V, f=100MHz ) f 100 - - MHz CE T 500 300 T = 150C J T = 150C J V = 1V V = 1V CE CE 400 T = 75C J 200 T = 75C J 300 T = 25C J T = 25C 200 J 100 100 0 0 1 10 100 1000 1 10 100 1000 I , Collector Current (mA) I , Collector Current (mA) C C Fig.1 BC817-16 Typical hfe vs. Ic Fig.2 BC817-25 Typical hfe vs. Ic 100 700 T = 150C J CIB ( E B ) 600 V = 1V CE 500 T = 75C J 400 10 300 T = 25C J 200 C ( E B ) OB 100 0 1 10 100 1000 1 0.1 1 10 100 I , Collector Current (mA) C VCB,VEB(V) Fig.3 BC817-40 Typical hfe vs. Ic Fig.4 Typical Capacitances January 30,2015-REV.04 PAGE . 2 hFE , Current Gain hFE , Current Gain hFE , Current Gain C , C ( F) CB CB P