BC817-40W_R1_00001 Panjit

BC817-16W SERIES NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 45 Volt POWER 300 mW FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current I = 500mA C Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case : SOT-323, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0001 ounce, 0.005 gram Device Marking : BC817-16W : 8S BC817-25W : 8V BC817-40W : 8W MAXIMUM RATINGS PARAMETER SYMBOL Value UNIT Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage V 50 V CBO Emitter-Base Voltage V 5V EBO Collector Current - Continuous I 500 mA C Peak Collector Current I 1000 mA CM Base Current - Peak I 200 mA BM Total Power Dissipation ( NOTE ) P 300 mW TOT o Junction and Storage Temperature Range T , T -55 to +150 C J STG THERMAL CHARACTERISTICS PARAMETER SYMBOL Value UNIT o Thermal Resistance Junction to Ambient ( NOTE ) R 420 C / W JA NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions. October 3,2014-REV.04 PAGE . 1BC817-16W SERIES o ELECTRICAL CHARACTERISTICS ( TJ=25 C,unless otherwise notes ) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 ) V CEO 45 - - V (BR) Collector-Base Breakdown Voltage ( V =0V, Ic=10A ) V CBO 50 - - V EB (BR) Emitter-Base Breakdown Voltage ( I =1A, Ic=0 ) V EBO 5.0 - - V E (BR) Emitter-Base Cutoff Current ( V =5V ) I - - 100 nA EB EBO nA o Collector-Base Cutoff Current ( V =20V, I =0 ) T =25 C - - 100 CB E J I CBO o - - 5.0 T =150 C J A DC Current Gain ( Ic=100mA, V =1V ) BC817-16W 100 - 250 - CE BC817-25W 160 - 400 - BC817-40W 250 - 600 - h FE DC Current Gain ( Ic=500mA, V =1V ) 40 --- CE Collector-Emitter Saturation Voltage ( Ic=500mA, I =50mA ) V -- 0.7 V B CE(SAT) Base-Emitte Voltage ( Ic=500mA, V =1.0V ) V -- 1.2 V CE BE(ON) Collector-Base Capacitance (V =10V, I =0, f=1MHz) C -7.0 - pF CB E CBO Current Gain-Bandwidth Product ( Ic=10mA, V =5V, f=100MHz ) f 100 - - MHz CE T October 3,2014-REV.04 PAGE . 2