BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 330 mWatt VOLTAGE 30/45/65 Volt FEATURES General purpose amplifier applications 0.120(3.04) 0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) Green molding compound as per IEC61249 Std 0.047(1.20) (Halogen Free) 0.008(0.20) 0.079(2.00) 0.070(1.80) 0.003(0.08) MECHANICAL DATA Case: SOT-23, Plastic 0.004(0.10) 0.044(1.10) Terminals: Solderable per MIL-STD-750, Method 2026 0.000(0.00) 0.035(0.90) Approx. Weight: 0.0003 ounces, 0.0084 grams 0.020(0.50) 0.013(0.35) Device Marking: BC846A-AU=46A BC847A-AU=47A BC848A-AU=48A BC846B-AU=46B BC847B-AU=47B BC848B-AU=48B BC849B-AU=49B BC850B-AU=50B BC847C-AU=47C BC848C-AU=48C BC849C-AU=49C BC850C-AU=50C ABSOLUTE RATINGS Parameter Symbol Value Units BC846-AU 65 Collector - Emitter Voltage BC847-AU,BC850-AU VCEO 45 V BC848-AU,BC849-AU 30 BC846-AU 80 Collector - Base Voltage BC847-AU,BC850-AU VCBO 50 V BC848-AU,BC849-AU 30 BC846-AU 6 Emitter - Base Voltage BC847-AU,BC850-AU VEBO 6 V BC848-AU,BC849-AU 5 Collector Current - Continuous I C 100 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max Power Dissipation (Note 1) PTOT 330 mW O Thermal Resistance , Junction to Ambient RJA 375 C/W O Operating Junction Temperature and Storage Temperature Range TJ,TSTG -55 to 150 C 2 Note 1: Transistor mounted on FR-4 board 8 cm . March 1,2016-REV.07 PAGE . 1 0.006(0.15)MIN.BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIES ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition MIN. TYP. MAX. Units BC846A-AU/B-AU 65 Collector - Emitter BC847A-AU/B-AU/C-AU,BC850B-AU/C-AU V (BR)CEO IC=10mA, IB=0 45 -- V Breakdown Voltage BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU 30 BC846A-AU/B-AU 80 Collector - Base BC847A-AU/B-AU/C-AU,BC850B-AU/C-AU V (BR)CBO IC=10uA, IE=0 50 -- V Breakdown Voltage BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU 30 BC846A-AU/B-AU 6 Emitter - Base BC847A-AU/B-AU/C-AU,BC850B-AU/C-AU V (BR)EBO IE=10uA, IC=0 6 -- V Breakdown Voltage BC848A-AU/B-AU/C-AU,BC849B-AU/C-AU 5 Emitter-Base Cutoff IEBO VEB=5 - - 100 nA Current Collector-Base VCB=30V, IE=0 15 nA ICBO -- O Cutoff Current VCB=30V, IE=0,TJ=150 C 5 A BC846-AU~BC848-AU Suffix 90 DC Current Gain BC846-AU~BC850-AU Suffix h IC=10uA, VCE=5V - 150 -- FE BC847-AU~BC850-AU Suffix 270 BC846-AU~BC848-AU Suffix 110 180 220 DC Current Gain BC846-AU~BC850-AU Suffix h IC=2mA, VCE=5V 200 290 450 - FE BC847-AU~BC850-AU Suffix 420 520 800 Collector - Emitter IC=10mA, IB=0.5mA 0.25 VCE(SAT) -- V Saturation Voltage IC=100mA, IB=5mA 0.6 Base - Emitter IC=10mA, IB=0.5mA 0.7 VBE(SAT) - -V Saturation Voltage IC=100mA, IB=5mA 0.9 Base - Emitter IC=2mA, VCE=5V 0.58 0.66 0.70 VBE(ON) V Voltage IC=10mA, VCE=5V - - 0.77 Collector - Base C CBO VCB=10V, IE=0, f=1MHz - - 4.5 pF Capacitance NPN March 1,2016-REV.07 PAGE . 2