BC847BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimentary pair (NPN and PNP) general-purpose transistors. This device is ideal for portable SOT- 363 applications where board space is at a premium. 44 55 FEATURES 66 33 Electrically-Isolated Complimentary Transistor Pairs 22 Lead free in compliance with EU RoHS 2.0 11 Green molding compound as per IEC 61249 standard 65 4 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: 47P 12 3 MAXIMUM RATINGS - NPN T = 25C Unless otherwise noted J Rating Symbol Value Units V Collector-Base Voltage CBO 50 V Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage Voltage V 6.0 V EBO Collector Current I 100 mA C MAXIMUM RATINGS - PNP T = 25C Unless otherwise noted J Rating Symbol Value Units V Collector-Base Voltage CBO -50 V Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage Voltage V -5.0 V EBO Collector Current I -100 mA C THERMAL CHARACTERISTICS Characteristic Symbol Value Units Total Power Dissipation (Note 1) P 200 mW D Operating Junction Temperature Range T -55 to +150 C J -55 to +150 C Storage Temperature Range T stg 556 Thermal Resistance, Junction to Ambient (Note 1) R thja C/W Note 1. FR-4 board 70 x 60 x 1mm with minimum recommended pad layout February 1,2018-REV.03 www.panjit.com Page 1BC847BPN T = 25C Unless otherwise noted NPN ELECTRICAL CHARACTERISTICS (Note 2) J Parameter Conditions Min Typ Max Units Symbol Collector-Emitter Breakdown VoltageV 45 - - V (BR)CEO I = 10mA C Collector-Emitter Breakdown VoltageV I = 10uA, V = 0 50 - - V (BR)CES C EB Collector-Base Breakdown Voltage V 50 - - V I = 10uA (BR)CBO C V Emitter-Base Breakdown Voltage I = 1.0uA 6.0 - - V (BR)EBO E - - 15 nA Collector Cutoff Current I V = 30V, I = 0CB CBO E T =150C-- 5 uA J I Emitter Cutoff Current V = 5V, I = 0 - - 100 nA EBO C EB h 200 - 450 - DC Current Gain FE V = 5V, I = 2.0mAC CE - - 0.1 V I = 10mA, I = 0.5mA CB Collector-Emitter Saturation Voltage VCE(SAT) I = 100mA, I = 5mA CB - - 0.4 V V Base-Emitter Saturation Voltage BE(SAT) I = 10mA, I = 0.5mA - 0.75 - V C B V 0.58 - 0.7 V Base-Emitter Voltage BE V = 5V, I = 2.0mAC CE V = 5V, I = 10mAC CE f Gain-Bandwidth Product 100 - - MHz T f = 100MHz C - - 1.5 pF Collector-Base Capacitance CBO V = 10V, f =1.0MHz CB C-7-pF Emitter-Base Capacitance EBO V = 0.5V, f =1.0MHz EB T = 25C Unless otherwise noted PNP ELECTRICAL CHARACTERISTICS (Note 2) J Parameter Conditions Min Typ Max Units Symbol Collector-Emitter Breakdown VoltageV -45 - - V (BR)CEO I = -10mA C Collector-Emitter Breakdown VoltageV I = -10uA, V = 0 -50 - - V (BR)CES C EB Collector-Base Breakdown Voltage V -50 - - V I = -10uA (BR)CBO C V Emitter-Base Breakdown Voltage I = -1.0uA -5.0 - - V (BR)EBO E - - -15 nA Collector Cutoff Current I V = -30V, I = 0CB CBO E T =150C - - -4.0 uA J I Emitter Cutoff Current V = -5V, I = 0 - - -100 nA EBO C EB h 200 - 475 DC Current Gain FE V = -5V, I = -2.0mAC CE - - -0.3 V I = -10mA, I = -0.5mA CB Collector-Emitter Saturation Voltage VCE(SAT) I = -100mA, I = -5mA CB - - -0.65 V V Base-Emitter Saturation Voltage BE(SAT) I = -10mA, I = -0.5mA - -0.7 - V C B V -0.6 - -0.75 V Base-Emitter Voltage BE V = -5V, I = -2.0mAC CE V = -5V, I = -10mAC CE f Gain-Bandwidth Product 100 - - MHz T f = 100MHz C - - 4.5 pF Collector-Base Capacitance CBO V = -10V, f =1.0MHz CB C - 11 - pF Emitter-Base Capacitance EBO V = -0.5V, f =1.0MHz EB Note 2. Short duration test pulse used to minimize self-heating February 1,2018-REV.03 www.panjit.com Page 2