X-On Electronics has gained recognition as a prominent supplier of BC847BS_R1_00001 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BS_R1_00001 Bipolar Transistors - BJT are a product manufactured by Panjit. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BS_R1_00001 Panjit

BC847BS_R1_00001 electronic component of Panjit
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Part No.BC847BS_R1_00001
Manufacturer: Panjit
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT /47S/TR/7"/HF/3K/SOT-363/TRA/SOT/DT-02TSN/DT02-QI03/PJ///
Datasheet: BC847BS_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 34485
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34485
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0748
100 : USD 0.0385
1000 : USD 0.0352
3000 : USD 0.0275
9000 : USD 0.0231
45000 : USD 0.0209
99000 : USD 0.0198

927
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.154
10 : USD 0.1274
100 : USD 0.098
250 : USD 0.0868
330 : USD 0.0504

   
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We are delighted to provide the BC847BS_R1_00001 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BS_R1_00001 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847BS NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volt POWER 150 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case : SOT-363, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.006 grams Marking : 47S ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO 45 V Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 6V Collector Current - Continuous I C 100 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Total Device Dissipation 300 mW O Per Device FR-5 Board (Note 1)T =25 C P 150 mW A D O O Derate above 25 C 3 mW/ C O Thermal Resistance , Junction to Ambient (Note 2) R 550 C/W JA O Junction Temperature T -55 to 150 C J O Storage Temperature T -55 to 150 C STG Note : 1.FR-5 board 1 x 0.75 x 0.062 in. 2.Mounted on a FR4 PCB, single-sided copper, mini pad. PAGE . 1 April 13,2016-REV.06BC847BS O ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise noted) J Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage V I =10mA 45 - - V (BR)CEO C Collector - Emitter Breakdown Voltage V I =10A, V =0 50 - - V (BR)CES C EB Collector - Base Breakdown Voltage V I =10A50--V (BR)CBO C Emitter - Base Breakdown Voltage V I =1 A6--V (BR)EBO E V =30V, 15 nA CB Collector Cutoff Current I -- CBO O V =30V, T =150 C 5 A CB A ON CHARACTERISTICS DC Current Gain h I =2mA, V =5V 200 - 450 - FE C CE I =10mA, I =0.5mA - 0.25 C B Collector - Emitter Saturation Voltage V - V CE(SAT) I =100mA, I =5mA - 0.6 C B I =10mA, I =0.5mA 0.6 - 0.9 C B Base - Emitter Saturation Voltage V V BE(SAT) I =100mA, I =5mA 0.8 - 1 C B I =2mA, V =5V 580 660 700 C CE Base - Emitter Voltage V mV BE(ON) I =10mA, V =5V - - 770 C CE SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product f I =10mA,V =5Vdc,f=100MH 100 - - MH T C CE Z Z Output Capacitance C V =10V,f=1MH -- 4.5 pF obo CB Z I =0.2mA,V =5Vdc, C CE Noise Figure NF R =2k,f=1.0kH , - - 10 dB S Z BW=200H Z 6 5 4 1 2 3 Fig.54 PAGE . 2 SULO 5(9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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