BC847BS NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volt POWER 150 mWatt FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case : SOT-363, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.006 grams Marking : 47S ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO 45 V Collector - Base Voltage VCBO 50 V Emitter - Base Voltage VEBO 6V Collector Current - Continuous I C 100 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Total Device Dissipation 300 mW O Per Device FR-5 Board (Note 1)T =25 C P 150 mW A D O O Derate above 25 C 3 mW/ C O Thermal Resistance , Junction to Ambient (Note 2) R 550 C/W JA O Junction Temperature T -55 to 150 C J O Storage Temperature T -55 to 150 C STG Note : 1.FR-5 board 1 x 0.75 x 0.062 in. 2.Mounted on a FR4 PCB, single-sided copper, mini pad. PAGE . 1 April 13,2016-REV.06BC847BS O ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise noted) J Parameter Symbol Test Condition Min. Typ. Max. Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage V I =10mA 45 - - V (BR)CEO C Collector - Emitter Breakdown Voltage V I =10A, V =0 50 - - V (BR)CES C EB Collector - Base Breakdown Voltage V I =10A50--V (BR)CBO C Emitter - Base Breakdown Voltage V I =1 A6--V (BR)EBO E V =30V, 15 nA CB Collector Cutoff Current I -- CBO O V =30V, T =150 C 5 A CB A ON CHARACTERISTICS DC Current Gain h I =2mA, V =5V 200 - 450 - FE C CE I =10mA, I =0.5mA - 0.25 C B Collector - Emitter Saturation Voltage V - V CE(SAT) I =100mA, I =5mA - 0.6 C B I =10mA, I =0.5mA 0.6 - 0.9 C B Base - Emitter Saturation Voltage V V BE(SAT) I =100mA, I =5mA 0.8 - 1 C B I =2mA, V =5V 580 660 700 C CE Base - Emitter Voltage V mV BE(ON) I =10mA, V =5V - - 770 C CE SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product f I =10mA,V =5Vdc,f=100MH 100 - - MH T C CE Z Z Output Capacitance C V =10V,f=1MH -- 4.5 pF obo CB Z I =0.2mA,V =5Vdc, C CE Noise Figure NF R =2k,f=1.0kH , - - 10 dB S Z BW=200H Z 6 5 4 1 2 3 Fig.54 PAGE . 2 SULO 5(9