BC856BW-AU_R1_000A1 Panjit

BC856BW-AU ~ BC857CW-AU PNP GENERAL PURPOSE TRANSISTORS 45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current I = 100mA C Complimentary (NPN) Devices : BC856BW-AU/BC857AW-AU Series Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0002 ounce, 0.005 gram Device Marking: Device Marking: BC857AW-AU=57A BC856BW-AU=56B BC857BW-AU=57B BC857CW-AU=57C ABSOLUTE MAXIMUM RATINGS PARAMETER Symbol Value Units BC856BW-AU -65 Collector - Emitter Voltage V V CEO BC857AW-AU/BW-AU/CW-AU -45 BC856BW-AU -80 Collector - Base Voltage V V CBO BC857AW-AU/BW-AU/CW-AU -50 BC856BW-AU 6 Emitter - Base Voltage V V EBO BC857AW-AU/BW-AU/CW-AU 6 Collector Current - Continuous I -100 mA C Max. Power Dissipation (Note 1) P 250 mW TOT O Storage Temperature Range T -55 to 150 C STG O Junction Temperature Range T -55 to 150 C J Note : 1. Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. April 23,2013-REV.03 PAGE . 1BC856BW-AU ~ BC857CW-AU THERMAL CHARACTERISTICS PARAMETER Symbol Value Units (Note 2) R 500 O JA Thermal Resistance C/W (Note 3) R 200 JC Note : 2.Mounted on an FR4 PCB, single-sided copper, mini pad. 2 3.Mounted on an FR4 PCB, single-sided copper, with 100cm copper pad area O ELECTRICAL CHARACTERISTICS (T =25 C, unless otherwise noted) J PARAMETER Symbol MIN. TYP. MAX. Units Collector - Emitter Breakdown Voltage BC856BW-AU -65 V CEO -- V (BR) (I =-10mA, I =0) BC857AW-AU/BW-AU/CW-AU -45 C B Collector - Base Breakdown Voltage BC856BW-AU -80 V CBO -- V (BR) (I =-10 A, I =0) BC857AW-AU/BW-AU/CW-AU -50 C E Emitter-Base Breakdown Voltage V EBO -5 - - V (BR) (I =-1uA, I =0) E C Emitter-Base Cutoff Current I - - -100 nA EBO (V =-5V) EB Collector-Base Cutoff Current O nA T =25 C -15 J (V =-30V, I =0) I -- CB E O CBO T =150 C -4 A J DC Current Gain BC857AW-AU 90 (I =-10 A, V =-5V) BC856BW-AU/BC857BW-AU h - 150 -- C CE FE BC857CW-AU 270 DC Current Gain BC857AW-AU 110 180 220 (I =-2.0mA, V =-5V) BC856BW-AU/BC857BW-AU h 200 290 450 - C CE FE BC857CW-AU 420 520 800 (I =-10mA, I =-0.5mA) - - -0.3 C B Collector - Emitter Saturation Voltage V V CE(SAT) (I =-100mA, I =-5.0mA) - - -0.65 C B (I =-10mA, I =-0.5mA) - -0.7 - C B Base - Emitter Saturation Voltage V V BE(SAT) (I =-100mA, I =-5.0mA) - -0.9 - C B (I =-2mA, V =-5.0V) -0.60 - -0.75 C CE Base - Emitter Voltage V V BE(ON) (I =-10mA, V =-5.0V) - - -0.82 C CE Collector - Base Capacitance (V =-10V, I =0, f=1MH)C -- 4.5 pF CB E Z CB Current-Gain-Bandwidth Product F. - 200 - MH Z (I =-10mA, V =-5.0V,f=100MH ) C CE Z April 23,2013-REV.03 PAGE . 2