MMBT2222A-AU_R1_000A1 Panjit

MMBT2222A-AU NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 40 Volt FEATURES NPN epitaxial silicon, planar design 0.120(3.04) 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.008(0.20) 0.079(2.00) 0.003(0.08) 0.070(1.80) MECHANICAL DATA 0.004(0.10) 0.044(1.10) Case: SOT-23, Plastic 0.000(0.00) 0.035(0.90) Terminals: Solderable per MIL-STD-750, Method 2026 0.020(0.50) 0.013(0.35) Collector Approx. Weight: 0.0003 ounces, 0.0084 grams 3 Marking: M2A 1 2 Base Emitter ABSOLUTE RATINGS Parameter Symbol Value Units Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 75 V Emitter - Base Voltage VEBO 6V Collector Current - Continuous I C 600 mA THERMAL CHARACTERISTICS Parameter Symbol Value Units Max. Power Dissipation (Note 1) PTOT 225 mW O Thermal Resistance , Junction to Ambient RJA 556 C/W O Junction Temperature TJ -55 to +150 C O Storage Temperature TSTG -55 to +150 C Note 1 : Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. February 25,2021 MMBT2222A-AU-REV.03 PAGE . 1 0.006(0.15)MIN.MMBT2222A-AU ELECTRICAL CHARACTERISTICS PlARAMETER SnymboT.est Conditio M.IN T.YP MsAX Unit CVollector - Emitter Breakdown Voltage (BR)CIEO C=1.0mA, IB=00 4- - V CVollector - Base Breakdown Voltage (BR)CIBO C=10uA, IE=50 7- - V EVmitter - Base Breakdown Voltage (BR)EIBO E=10uA, IC=00 6-. - V BIase Cutoff Current BL VCE=60V, VEB=-3.0V - 2A0 n ICEX VCE=60V, VEB=-3.0V - 1A0 n Collector Cutoff Current VCE=60V, IE=0, 10 nA ICBO -- O VCE=60V, IE=0,TJ=125 C 10 uA EImitter Cutoff Current EBO VEB=-3.0V, IC=0, - 1A00 n IC=0.1mA, VCE=10V 35 - - IC=1.0mA, VCE=10V 50 - - IC=10mA, VCE=10V 75 - - O DhC Current Gain IC=10mA, VCE=10V,TJ=125 C 35 - - - F E IC=150mA, VCE=10V (Note 2) 100 - 300 IC=150mA, VCE=1V (Note 2) 50 - - IC=500mA, VCE=10V (Note 2) 40 - - Collector - Emitter Saturation Voltage IC=150mA, IB=15mA 0.3 VCE(SAT) -- V (Note 2) IC=500mA, IB=50mA 1.0 Base - Emitter Saturation Voltage IC=150mA, IB=15mA 0.6 - 1.2 VBE(SAT) V (Note 2) IC=500mA, IB=50mA - - 2.0 CCollector - Base Capacitance CBO VCB=10V, IE=-0, f=1MHz - 8F.0 p ECmitter - Base Capacitance EBO VCB=0.5V, IC=-0, f=1MHz - 2F5 p VCC=3V,VBE=-5V, Ddelay Time t --01sn IC=150mA,IB=15mA VCC=3V,VBE=-5V, Rrise Time t -- 2s5 n IC=150mA,IB=15mA VCC=30V,IC=150mA Sstorage Time t -- 2s25 n IB1=IB2=15mA VCC=30V,IC=150mA Ffall Time t -- 6s0 n IB1=IB2=15mA Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30V +30V 200 200 1.0to100us Duty Cycle ~ 2.0% 1.0 to 100us +16V Duty Cycle ~ 2.0% +16V 0 00 -2 V C * < 10pF C * < 10pF 1K 1K S S -14 V < 2ns < 20ns 1N914 Scope rise time < 4ns -4V * Total shunt capacitance of test jig, connectors, and oscilloscope Fig. 1 Turn-On Time Fig. 2 Turn-Off Time February 25,2021 MMBT2222A-AU-REV.03 PAGE . 2